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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 3.9A 6MICROFOOT
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Common Drain
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：3.9A
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：1V @ 980µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-MICRO FOOT®CSP
- Supplier Device Package：6-Micro Foot™ (2.36x1.56)
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI8902EDB-T2-E1 is a bi-directional N-channel MOSFET featuring TrenchFET technology. It operates with a drain-source voltage of 20 V and delivers a continuous source current up to 3.9 A at 25 °C, peaking at 5 A under specific gate drive conditions. The device exhibits an ultra-low on-resistance of 45 mΩ at VGS = 4.5 V. Packaged in a MICRO FOOT format measuring 2.4 mm by 1.6 mm, it provides ESD protection rated at 4000 V. Thermal performance includes a maximum junction-to-ambient resistance of 75 °C/W for transient states.
Feature Summary
- Bi-directional conduction capability utilizing TrenchFET power MOSFET architecture
- MICRO FOOT chipscale packaging reduces footprint area profile and on-resistance per footprint area
- Integrated electrostatic discharge protection rated at 4000 V
Applications
- Battery protection circuits
- 1-2 cell Li+/LiP battery packs for portable devices
Procurement Notes
Verify the component against the official Vishay datasheet document number 71862 to confirm technical specifications. Ensure the ordering suffix matches the lead-free and halogen-free variant designated as SI8902EDB-T2-E1. Confirm compliance with material categorization standards via the manufacturer's documentation before finalizing procurement.
Selection Notes
Select this component for applications requiring compact surface-mount solutions where board space is limited. The low thermal impedance and small package size make it suitable for high-density designs. Validate that the required gate drive voltage aligns with the specified on-resistance characteristics to ensure optimal switching performance.
Part Context
This part belongs to the Vishay Siliconix TrenchFET family, designed for high-efficiency power management. The MICRO FOOT packaging represents a wafer-level chip-scale approach that eliminates traditional outer packages. This design philosophy focuses on minimizing parasitic effects and improving thermal dissipation compared to standard leaded packages.
Replacement Considerations
Consult the official Vishay Siliconix documentation for verified substitute part numbers. Cross-reference pin configurations and electrical ratings to ensure compatibility with existing circuit layouts.
FAQ
What is the maximum continuous source current rating?
The maximum continuous source current is 3.9 A at a case temperature of 25 °C.
How does the device handle electrostatic discharge?
The device incorporates built-in ESD protection capable of withstanding 4000 V.
What is the physical footprint of the package?
The MICRO FOOT package measures 2.4 mm by 1.6 mm.
