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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 6.2A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：6.2A (Ta), 8A (Tc)
- Rds On (Max) @ Id, Vgs：29mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：420pF @ 30V
- Power - Max：2W (Ta), 3.6W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI9634DY-T1-GE3 is a dual N-channel MOSFET utilizing TrenchFET Gen IV technology. It features a 60 V drain-source voltage rating and an SO-8 surface-mount package. The device provides a maximum on-resistance of 29 mΩ at VGS = 10 V and 38 mΩ at VGS = 4.5 V, with a continuous drain current capacity of 8 A. Key dynamic parameters include a typical total gate charge of 7.1 nC at VGS = 10 V and 3.3 nC at VGS = 4.5 V. Thermal resistance from junction to ambient is rated at a maximum of 62.5 °C/W.
Feature Summary
- TrenchFET Gen IV power MOSFET architecture
- Optimized gate charge characteristics for reduced switching loss
- 100% tested for gate resistance and unclamped inductive switching
Applications
- Synchronous rectification
- Load switch applications
- Motor drive control
- Battery management systems
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm lead-free status and halogen-free compliance. Confirm that the SO-8 package dimensions align with your PCB footprint requirements. Ensure thermal design accounts for the specified junction-to-ambient resistance limits under steady-state conditions.
Selection Notes
Select this component when a dual N-channel configuration is required within an SO-8 footprint. Evaluate the 60 V breakdown voltage and low on-resistance specifications against circuit load demands. Consider the optimized gate charge metrics if high-frequency switching efficiency is a primary design constraint.
Part Context
This part belongs to the Vishay Siliconix SI9 series of power MOSFETs. It utilizes the standard SO-8 narrow package format defined by JEDEC standards. The device integrates two independent N-channel enhancement mode field-effect transistors into a single compact semiconductor assembly.
Replacement Considerations
SI9634DY-GE3
FAQ
What is the maximum continuous drain current rating?
The maximum continuous drain current is 8 A at a case temperature of 25 °C.
Does the device support unclamped inductive switching?
Yes, the datasheet specifies that 100% of units are tested for unclamped inductive switching (UIS).
What is the body diode reverse recovery time?
The typical body diode reverse recovery time is 14 ns under test conditions of IF = 5 A and dI/dt = 100 A/μs.
