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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 8A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：8A
- Rds On (Max) @ Id, Vgs：18mOhm @ 8.3A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1200pF @ 10V
- Power - Max：3.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The SI9926CDY-T1-E3 is a dual N-channel power MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 20 V drain-source voltage rating and an 8 A continuous drain current capacity at 25 °C case temperature. The device offers a maximum on-state resistance of 0.018 Ω at VGS = 4.5 V and 0.022 Ω at VGS = 2.5 V. Packaged in an SO-8 surface-mount footprint, it supports a junction temperature range of -55 °C to +150 °C. Key dynamic parameters include a typical total gate charge of 10 nC at VGS = 4.5 V and a forward transconductance of 45 S.
Feature Summary
- TrenchFET power MOSFET architecture for optimized performance
- 100% single-pulse avalanche energy tested for ruggedness
- Dual configuration with independent channel control
Applications
- DC/DC converter circuits
- Game machine power management
- PC system power regulation
Procurement Notes
Verify the specific ordering suffix when sourcing components. The suffix 'E3' indicates lead-free construction compliant with RoHS standards. The suffix 'GE3' denotes both lead-free and halogen-free manufacturing. Confirm that the required package variant matches the intended PCB layout before finalizing procurement orders.
Selection Notes
Select this component for low-voltage applications requiring high current density within a compact SO-8 package. Ensure the gate drive voltage meets the specified thresholds for optimal RDS(on) performance. Evaluate thermal dissipation requirements against the junction-to-ambient resistance ratings for the target operating environment.
Part Context
This part belongs to the Vishay Siliconix SI9926 series of dual N-channel MOSFETs. The product line utilizes advanced TrenchFET technology to achieve low on-resistance and fast switching speeds. The SO-8 package provides a standardized footprint suitable for automated surface-mount assembly processes.
Replacement Considerations
The datasheet does not list official direct replacements. Verify pinout compatibility and electrical specifications if considering alternative manufacturers. Cross-reference absolute maximum ratings to ensure equivalent or superior performance margins.
