SI9926DY

$0.20

Description：MOSFET 2N-CH 20V 6.5A 8SOIC
Series：-

SKU:d31905e739c9 Category: FET, MOSFET Arrays Brand: Fairchild Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 20V 6.5A 8SOIC
Series：-
Mfr：Fairchild Semiconductor
Package：Bulk
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：6.5A (Ta)
Rds On (Max) @ Id, Vgs：30mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：700pF @ 10V
Power - Max：900mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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SI9926DY

Overview

The SI9926DY is a dual N-channel MOSFET manufactured by Vishay. It features a drain-source voltage of 20 V and a continuous drain current of 6 A. The device has a maximum power dissipation of 2 W and operates within a junction temperature range up to 150 °C. It utilizes a surface-mount package with eight pins.

Feature Summary

Dual N-channel configuration
Enhancement mode operation
Metal-oxide semiconductor technology

Applications

General purpose switching applications

Procurement Notes

Verify the manufacturer designation, as the component is produced by Vishay despite potential legacy Fairchild branding in some databases. Confirm RoHS compliance status, as specific records indicate non-compliance for this part number. Ensure the package type matches the required eight-pin surface-mount specification for your design.

Selection Notes

Select this component for low-voltage applications requiring a 20 V rating and 6 A current capacity. Consider the 2 W power dissipation limit when designing thermal management solutions. Verify that the enhancement mode characteristics align with the gate drive requirements of the target circuit.

Part Context

This component belongs to the category of dual N-channel MOSFETs. It is designed for general-purpose switching tasks. The device integrates two independent channels within a single package to save board space. It is suitable for applications where moderate current handling and low voltage operation are required.