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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 4A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：4A
- Rds On (Max) @ Id, Vgs：58mOhm @ 4.8A, 4.5V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：26nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：665pF @ 10V
- Power - Max：3.1W
- Operating Temperature：-50°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The SI9933CDY-T1-E3 is a dual P-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology in an SO-8 package. It features a drain-source voltage (VDS) of -20 V and a continuous drain current (ID) of -4 A at TC = 25 °C. The maximum on-state resistance (RDS(on)) is 0.058 Ω at VGS = -4.5 V and 0.094 Ω at VGS = -2.5 V. Key dynamic parameters include a typical total gate charge (Qg) of 8 nC at VGS = -4.5 V and 26 nC at VGS = -10 V. The device supports an operating junction temperature range of -50 °C to +150 °C with a maximum power dissipation of 3.1 W.
Feature Summary
- Dual P-channel configuration within a single SO-8 package
- TrenchFET power MOSFET architecture for optimized performance
- 100% tested for gate resistance and unclamped inductive switching
Applications
- Load switch applications
- DC/DC converter circuits
Procurement Notes
Verify the specific ordering suffix when sourcing components. The E3 suffix indicates lead-free compliance, while GE3 denotes both lead-free and halogen-free status. Confirm that the required variant matches the exact part number to ensure correct material composition and regulatory adherence for the intended manufacturing process.
Selection Notes
Select this component for low-voltage dual P-channel switching requirements where compact surface-mount packaging is necessary. Evaluate thermal management needs against the specified junction-to-ambient and junction-to-foot thermal resistances. Ensure the gate drive voltage aligns with the RDS(on) specifications at either -4.5 V or -2.5 V to meet efficiency targets.
Part Context
This device belongs to the Vishay Siliconix Si9933 series of dual P-channel MOSFETs. It shares the same electrical characteristics and pinout as the SI9933CDY-T1-GE3, differing only in the environmental compliance suffix. Both variants utilize the standard SO-8 narrow package and are designed for similar low-voltage power switching applications.
Replacement Considerations
The SI9933CDY-T1-GE3 serves as a direct functional replacement, offering identical electrical performance with halogen-free compliance.
