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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 4A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：4A
- Rds On (Max) @ Id, Vgs：58mOhm @ 4.8A, 4.5V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：26nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：665pF @ 10V
- Power - Max：3.1W
- Operating Temperature：-50°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI9933CDY-T1-GE3 is a dual P-channel MOSFET utilizing TrenchFET technology, housed in an SO-8 package. It features a drain-source voltage (VDS) of -20 V and a continuous drain current (ID) of -4 A at 25 °C case temperature. The maximum on-state resistance (RDS(on)) is 0.058 Ω at VGS = -4.5 V and 0.094 Ω at VGS = -2.5 V. Total gate charge (Qg) is typically 17 nC at VGS = -10 V. The device supports an operating junction temperature range from -50 °C to +150 °C with a maximum power dissipation of 3.1 W.
Feature Summary
- Dual P-channel configuration within a single SO-8 package
- TrenchFET power MOSFET architecture for optimized performance
- 100% tested for gate resistance and unclamped inductive switching
Applications
- Load switch applications
- DC/DC converter circuits
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm compliance status. The GE3 suffix indicates lead-free and halogen-free material categorization. Confirm that the component meets RoHS directives by referencing the manufacturer's compliance definitions. Ensure the procurement channel sources directly from authorized distributors to maintain product integrity and traceability.
Selection Notes
Select this component for low-voltage dual P-channel switching requirements where compact surface-mount packaging is necessary. Evaluate the RDS(on) specifications at the intended gate drive voltage to ensure acceptable conduction losses. Consider the thermal resistance ratings when designing heat dissipation strategies for high-current or elevated ambient temperature environments.
Part Context
This part belongs to the Vishay Siliconix SI9933 series of dual P-channel MOSFETs. It shares the same core electrical characteristics as the SI9933CDY-T1-E3 variant, differing primarily in the environmental compliance suffix. Both variants utilize the standard SO-8 footprint and are designed for similar low-voltage power switching applications.
Replacement Considerations
The SI9933CDY-T1-E3 serves as a direct functional replacement, sharing identical pinouts and electrical parameters. Verify that any alternative components match the -20 V rating and SO-8 package dimensions to ensure compatibility with existing PCB layouts.
