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Product Detailed Parameters
- Description：MOSFET 2P-CH 12V 4.8A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：12V
- Current - Continuous Drain (Id) @ 25°C：4.8A
- Rds On (Max) @ Id, Vgs：35mOhm @ 6.4A, 4.5V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The SI9934BDY-T1-E3 is a P-Channel Power MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It features a drain-source voltage (Vds) of -20 V and a continuous drain current (Id) of -8 A at 25°C. The device exhibits a maximum on-resistance (Rds(on)) of 27 mΩ at a gate-source voltage (Vgs) of -4.5 V. It operates within a junction temperature range of -55°C to +150°C and is housed in an SO-8 surface-mount package.
Feature Summary
- TrenchFET power MOSFET technology for optimized performance
- Enhancement mode P-Channel configuration
- Lead-free plating compliant with RoHS standards
Applications
- Power management circuits requiring low-side switching
- Battery protection systems
- DC-DC converter output stages
Procurement Notes
Verify the specific suffix 'E3' confirms lead-free termination and RoHS compliance as per manufacturer specifications. Confirm availability status, as distribution channels may list this component as obsolete or end-of-life. Ensure the ordering part number matches the exact tape-and-reel quantity requirements for production integration.
Selection Notes
Select this component when a -20V P-Channel MOSFET with approximately 8A current capability is required. Verify that the 27mΩ on-resistance meets thermal dissipation limits for the intended load. Ensure the SO-8 package footprint aligns with the PCB layout constraints and that the gate drive voltage supports the specified Rds(on) threshold.
Part Context
This component belongs to the Vishay Siliconix SI99 series of TrenchFET MOSFETs. It is designed for general-purpose power switching applications where efficiency and thermal performance are critical. The SO-8 package provides a compact solution for high-current density designs compared to traditional through-hole packages.
Replacement Considerations
Consult official Vishay documentation for direct pin-compatible replacements. Verify that any substitute maintains identical voltage ratings, current capabilities, and package dimensions to ensure seamless integration without redesigning the printed circuit board.
