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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 4.5A 8SOIC
- Series：-
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：4.5A
- Rds On (Max) @ Id, Vgs：35mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix Si9936BDY-T1-E3 is a dual N-channel MOSFET utilizing TrenchFET technology, housed in an SO-8 surface-mount package. It features a drain-source voltage (VDS) of 30 V and a continuous drain current (ID) of 6.0 A at 25 °C. The device exhibits a maximum on-state resistance (RDS(on)) of 0.035 Ω at VGS = 10 V and 0.052 Ω at VGS = 4.5 V. Key dynamic parameters include a total gate charge (Qg) of 13 nC and a forward transconductance (gfs) of 12 S. Thermal ratings specify a maximum junction temperature of 150 °C and a steady-state thermal resistance (junction-to-ambient) of 110 °C/W.
Feature Summary
- Dual N-channel configuration within a single compact SO-8 package
- TrenchFET power transistor technology for optimized performance
- Lead-free and halogen-free construction compliant with RoHS directives
Applications
- DC/DC converters
- Power management circuits
- Load switches
Procurement Notes
Verify the specific ordering suffix to confirm compliance requirements. The -E3 suffix indicates lead-free status, while -GE3 denotes both lead-free and halogen-free attributes. Confirm that the component meets the IEC 61249-2-21 definition for halogen-free materials if required by the design specifications.
Selection Notes
Select this component when a dual N-channel topology is required in an SO-8 footprint. Ensure the application operates within the 30 V drain-source voltage limit and accounts for the 6.0 A continuous current rating at 25 °C ambient temperature. Verify that the gate drive voltage supports the specified RDS(on) thresholds.
Part Context
This part belongs to the Vishay Siliconix Si9936BDY series of dual N-channel MOSFETs. It is manufactured using silicon TrenchFET technology and is designed for surface-mount applications. The datasheet document number is 72521, revision S09-0704-Rev. C.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation.
FAQ
What is the maximum pulsed drain current for the Si9936BDY?
The absolute maximum pulsed drain current (IDM) is rated at 40 A.
How does the on-state resistance vary with gate-source voltage?
The maximum RDS(on) is 0.035 Ω at VGS = 10 V and increases to 0.052 Ω at VGS = 4.5 V.
What is the source-drain reverse recovery time?
The source-drain reverse recovery time (trr) is typically 20 ns and has a maximum rating of 40 ns under test conditions of IF = 1.7 A and dI/dt = 100 A/µs.
