ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 4.5A 8SOIC
- Series：-
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：4.5A
- Rds On (Max) @ Id, Vgs：35mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
Download product information
Overview
The Vishay Siliconix Si9936BDY-T1-GE3 is a dual N-channel MOSFET utilizing TrenchFET technology, housed in an SO-8 surface-mount package. It features a drain-source voltage (VDS) of 30 V and a gate-source voltage (VGS) of ±20 V. The device supports a continuous drain current (ID) of 6.0 A at 25 °C, with a maximum on-state resistance (RDS(on)) of 0.035 Ω at VGS = 10 V and 4.9 A. Thermal performance includes a junction-to-ambient resistance (RthJA) of 92 °C/W under steady-state conditions. Operating temperatures range from -55 °C to +150 °C.
Feature Summary
- Dual N-channel configuration within a single compact SO-8 package
- TrenchFET power transistor technology for optimized on-resistance
- Halogen-free construction compliant with IEC 61249-2-21 standards
Applications
- DC-DC converter circuits requiring dual channel control
- Low-side switching applications in power management systems
- Battery protection modules and load switches
Procurement Notes
Verify the specific ordering suffix against the manufacturer's datasheet to confirm compliance requirements. The GE3 suffix indicates lead-free and halogen-free status according to IEC 61249-2-21. Confirm that the component meets RoHS Directive 2002/95/EC standards before finalizing procurement specifications.
Selection Notes
Select this component when a dual N-channel topology is required in an SO-8 footprint. Ensure the application operates within the 30 V drain-source limit and accounts for thermal derating above 25 °C. Verify that the gate drive voltage aligns with the specified RDS(on) test conditions for optimal efficiency.
Part Context
This part belongs to the Vishay Siliconix Si9936BDY series of dual N-channel MOSFETs. It is manufactured using silicon TrenchFET technology. The product is available in tape-and-reel packaging for automated surface-mount assembly processes.
Replacement Considerations
Publicly confirmed substitute part numbers are not provided in the source documentation. Consult official replacement guides or contact authorized distributors for verified alternatives.
