SI9936DY,518

Overview

The Si9936DY is a dual N-channel enhancement mode field-effect transistor manufactured by NXP USA Inc. It utilizes TrenchMOS technology and is housed in an SOT96-1 (SO8) plastic package. The device features a drain-source voltage rating of 30 V and a pulsed drain current capacity of 5 A at 25°C ambient temperature. On-state resistance is specified at 50 mΩ maximum when VGS is 10 V with ID at 5 A, and 80 mΩ maximum when VGS is 4.5 V with ID at 3.9 A. Total power dissipation reaches 2 W under pulsed conditions. The junction temperature range extends from -55°C to +150°C.

Feature Summary

• Dual configuration integrating two independent N-channel enhancement mode transistors within a single compact plastic package.
• TrenchMOS technology implementation providing low on-state resistance for efficient conduction and fast switching capabilities.

Applications

• DC to DC convertors
• DC motor control
• Lithium-ion battery applications
• Notebook PC systems
• Portable equipment applications

Procurement Notes

Verify the specific manufacturer origin as documentation references Philips Semiconductors history while current listings indicate NXP USA Inc. Confirm the package designation matches SOT96-1 (SO8) requirements for your PCB footprint. Ensure thermal management aligns with the provided transient thermal impedance data for your specific pulse duration and mounting base temperature conditions.

Selection Notes

Select this component for designs requiring dual isolated channels in a small surface-mount form factor. Evaluate the 30 V drain-source voltage limit against peak circuit transients. Consider the 5 A pulsed current capability and ensure the operating junction temperature remains within the -55°C to +150°C range during continuous or repetitive pulse operations.

Part Context

This dual MOSFET belongs to the family of enhancement mode field-effect transistors utilizing TrenchMOS technology. It serves as a compact solution for replacing discrete single-transistor pairs in space-constrained portable electronics and power management circuits where low on-resistance and fast switching are critical performance factors.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation.

FAQ

What is the maximum gate-source voltage rating?

The absolute maximum DC gate-source voltage rating is ±20 V.

How does the on-state resistance vary with gate voltage?

RDSon is specified at a maximum of 50 mΩ at VGS = 10 V and 80 mΩ at VGS = 4.5 V, both measured at ID = 5 A and 3.9 A respectively.

What is the reverse recovery time of the internal source-drain diode?

The reverse recovery time (trr) is typically 60 ns and has a maximum specification of 160 ns when IS = 5 A and dIS/dt = -100 A/μs.