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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 5.3A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：5.3A
- Rds On (Max) @ Id, Vgs：58mOhm @ 4.3A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：665pF @ 15V
- Power - Max：3.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The SI9945BDY-T1-GE3 is a dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a drain-source voltage (VDS) of 60 V and a continuous drain current (ID) of 5.3 A at TC = 25 °C. The maximum on-state resistance (RDS(on)) is 0.058 Ω at VGS = 10 V and 0.072 Ω at VGS = 4.5 V. Typical total gate charge (Qg) is 13 nC. The device operates within a junction temperature range of -55 °C to +150 °C and is housed in an SO-8 package.
Feature Summary
- Dual N-channel configuration with integrated body diodes
- TrenchFET power MOSFET architecture for low on-resistance
- Lead-free and halogen-free material compliance
Applications
- LCD TV CCFL inverters
- Load switching circuits
Procurement Notes
Verify the component status before procurement as the datasheet indicates potential discontinuation or limited availability. Confirm that the specific ordering suffix matches the required lead-free and halogen-free specifications. Ensure compatibility with standard SO-8 surface mount assembly processes and validate thermal management requirements against the specified junction-to-ambient resistance values.
Selection Notes
Select this component for applications requiring a compact dual N-channel solution with a 60 V rating. Consider the RDS(on) performance at both 10 V and 4.5 V gate drive voltages when designing the control circuitry. Evaluate the thermal dissipation capabilities based on the intended operating environment and PCB layout constraints to ensure operation within the safe operating area limits.
Part Context
This part belongs to the Vishay Siliconix TrenchFET family, designed for general-purpose power switching applications. The SO-8 package provides a balance between current handling capability and board space efficiency. It serves as a dual-channel alternative to single-channel MOSFETs in space-constrained designs requiring independent or synchronized switching of two loads.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameters if considering alternatives from other manufacturers.
