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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 4.3A 8SOP
- Series：-
- Mfr：UMW
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：4.3A (Ta), 5.3A (Tc)
- Rds On (Max) @ Id, Vgs：36mOhm @ 4.3A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：665pF @ 15V
- Power - Max：2W (Ta), 3.1W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
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Overview
The UMW SI9945BDY is a dual N-channel MOSFET featuring a 60 V drain-source voltage and a 20 V gate-source rating. It operates within a junction temperature range of -55 °C to +150 °C. The device provides a maximum continuous drain current of 5.3 A at 25 °C case temperature, with an on-state resistance of 36 mΩ at VGS = 10 V and 47 mΩ at VGS = 4.5 V. Total gate charge is typically 13 nC at VGS = 10 V. Thermal resistance from junction to ambient is 62.5 °C maximum. The component is housed in a SOP-8 package.
Feature Summary
- Dual N-channel configuration for independent or parallel load control
- Low on-state resistance optimized for logic-level gate drive voltages
- Robust avalanche energy capability for inductive load switching
- Lead-free packaging compliant with environmental standards
Applications
- LCD TV CCFL inverters
- General-purpose load switches
- High-speed line drivers
Procurement Notes
Verify the specific ordering code against the manufacturer's official documentation to ensure correct package type and tape-and-reel quantity. Confirm that the component meets all required electrical specifications for the target application before finalizing procurement decisions.
Selection Notes
Select this component when a dual N-channel solution is required with a 60 V breakdown voltage. Ensure the gate drive circuit can supply sufficient current to manage the total gate charge of approximately 13 nC. Verify thermal management requirements based on the specified junction-to-ambient resistance values under steady-state conditions.
Part Context
This part belongs to the family of dual N-channel enhancement mode field-effect transistors manufactured by UMT Semiconductor Co., Limited. It utilizes standard silicon planar technology designed for surface-mount applications requiring compact footprints and efficient power handling capabilities.
Replacement Considerations
Check pinout compatibility and electrical ratings such as VDS, ID, and RDS(on) when evaluating substitutes. Ensure the replacement device supports the same SOP-8 package dimensions and thermal characteristics to maintain board integrity.
