SI9955DY

SI9955DY

$1.02
  • Description:MOSFET 2N-CH 50V 3A 8SOIC
  • Series:-

SKU:cdf4524faeb7 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 50V 3A 8SOIC
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):50V
  • Current - Continuous Drain (Id) @ 25°C:3A
  • Rds On (Max) @ Id, Vgs:130mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:345pF @ 15V
  • Power - Max:900mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

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SI9955DY

Overview

The SI9955DY is a dual N-channel enhancement mode MOSFET manufactured by Fairchild Semiconductor. It features a PowerTrench process designed to minimize on-state resistance while maintaining fast switching performance. The device provides a continuous drain current of 3.0 A and a breakdown voltage of 50 V. On-resistance is specified at 0.130 Ω at VGS = 10 V and 0.200 Ω at VGS = 4.5 V. Packaged in an SO-8 surface-mount format, it supports a maximum junction temperature of 150 °C.

Feature Summary

  • Optimized PowerTrench process for low on-state resistance and superior switching speed
  • High power and current handling capability suitable for demanding applications
  • Low gate charge characteristics for efficient drive requirements

Applications

  • Battery switch circuits
  • Load switch implementations
  • Motor control systems

Procurement Notes

Verify the manufacturer origin as Fairchild Semiconductor or its successor entities like onsemi. Confirm the package type matches the SO-8 outline provided in the datasheet. Ensure the component revision aligns with the required specifications for your design.

Selection Notes

Select this component when low inline power loss and rapid switching are critical within a 50 V, 3.0 A envelope. Evaluate thermal management based on the specific copper pad area used, as junction-to-ambient resistance varies significantly with board layout dimensions.

Part Context

This dual MOSFET belongs to the PowerTrench family from Fairchild Semiconductor. It utilizes advanced silicon processing to achieve high efficiency in compact packages. The technology focuses on balancing conduction losses with switching dynamics for general-purpose power management tasks.

Replacement Considerations

Check for equivalents from Vishay (Siliconix) such as the SI9955DY series variants. Verify pinout compatibility and electrical parameters against the original Fairchild specifications before substitution.

SI9955DYSI9955DY
$1.02
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