SIA513DJ-T1-GE3

Overview

The SIA513DJ-T1-GE3 is a dual MOSFET array manufactured by Vishay Siliconix, featuring complementary N-channel and P-channel configurations within a single PowerPAK SC-70-6 surface-mount package. This component utilizes TrenchFET technology to achieve low on-resistance and efficient switching performance. It supports a drain-to-source voltage of 20V and provides a continuous drain current of 4.5A at 25°C. The device is designed for high-density applications with a maximum power dissipation of 6.5W.

Feature Summary

• Complementary dual configuration integrating both N-channel and P-channel transistors in one package
• TrenchFET technology implementation for optimized conduction losses and switching efficiency
• Compact PowerPAK SC-70-6 surface-mount footprint suitable for space-constrained designs

Applications

• DC-DC converter synchronous rectification stages
• Low-voltage load switch circuits
• Battery protection and management systems

Procurement Notes

Verify the specific ordering suffix GE3 to confirm RoHS compliance and halogen-free status as defined by the manufacturer. Ensure the PowerPAK SC-70-6 package dimensions match the target PCB layout requirements. Confirm that the 20V voltage rating and 4.5A current capacity align with the operational parameters of the intended circuit design before finalizing procurement.

Selection Notes

Select this component when a compact solution requiring both high-side and low-side switching capabilities is necessary. The dual array configuration reduces board space compared to discrete components. Consider the 20V limit and thermal dissipation characteristics relative to the application's power requirements. The SC-70-6 package offers a balance between thermal performance and size for portable electronics.

Part Context

This part belongs to the Vishay Siliconix PowerPAK family, which specializes in small-footprint power solutions. The SIA series specifically addresses the need for integrated complementary pairs in low-voltage applications. It complements other single-channel MOSFETs by providing a unified switching pair for simplified circuit topology.

FAQ

What is the channel configuration of the SIA513DJ-T1-GE3?

It is a dual MOSFET array containing one N-channel and one P-channel transistor.

What is the maximum continuous drain current rating?

The continuous drain current is rated at 4.5A at 25°C.