SIA527DJ-T1-GE3

Overview

The SiA527DJ-T1-GE3 is a dual MOSFET from Vishay Siliconix, integrating one N-channel and one P-channel device in a single PowerPAK SC-70-6L package. It utilizes TrenchFET technology to achieve low on-resistance within a small footprint. The N-channel component supports a drain-source voltage of 12 V with a maximum continuous drain current of 4.5 A and a typical RDS(on) of 0.029 Ω at VGS = 4.5 V. The P-channel counterpart also features a 12 V rating, a 4.5 A continuous current capability, and a typical RDS(on) of 0.041 Ω at VGS = -4.5 V. Both channels operate within a junction temperature range of -55 °C to +150 °C.

Feature Summary

• Dual configuration combining N-channel and P-channel enhancement mode MOSFETs in a compact leadless PowerPAK SC-70-6L package.
• TrenchFET power architecture designed to minimize on-resistance while maintaining a small surface-mount footprint for efficient board space utilization.

Applications

• Load switches in portable devices
• Power management circuits
• DC/DC converters

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm compliance attributes such as lead-free and halogen-free status. Ensure that the package type matches the required thermal and mechanical constraints for the target application. Cross-reference the manufacturer part number with authorized distributors to confirm availability and authenticity before procurement.

Selection Notes

Select this component when a dual N/P-channel solution is required in a minimal footprint. Evaluate the 12 V breakdown voltage and 4.5 A current limits against circuit requirements. Consider the thermal resistance characteristics and the specific gate drive voltages needed to achieve the desired on-resistance levels for both channels.

Part Context

This component belongs to the SiA series of dual MOSFETs manufactured by Vishay Siliconix. It is part of the TrenchFET family, which emphasizes low on-resistance and high efficiency. The PowerPAK SC-70-6L package provides a thermally enhanced solution suitable for space-constrained portable electronics applications.

Replacement Considerations

Consult official Vishay documentation for verified substitute part numbers. Do not assume functional equivalence with other dual MOSFET packages without verifying pinout compatibility, electrical ratings, and thermal performance specifications.

FAQ

What is the maximum continuous drain current for the SiA527DJ?

Both the N-channel and P-channel components support a maximum continuous drain current of 4.5 A under specified thermal conditions.

Does the SiA527DJ include body diodes?

Yes, the datasheet specifies Drain-Source Body Diode Characteristics, including forward voltage, reverse recovery time, and charge for both channel types.

What is the operating junction temperature range?

The device operates within a junction and storage temperature range of -55 °C to +150 °C.