SIA777EDJ-T1-GE3

SIA777EDJ-T1-GE3

  • Description:MOSFET N/P-CH 20V/12V 1.5A PPAK
  • Series:TrenchFET®

SKU:09157fdf2817 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET N/P-CH 20V/12V 1.5A PPAK
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V, 12V
  • Current - Continuous Drain (Id) @ 25°C:1.5A, 4.5A
  • Rds On (Max) @ Id, Vgs:225mOhm @ 1.6A, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:2.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Power - Max:5W, 7.8W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:PowerPAK® SC-70-6 Dual
  • Supplier Device Package:PowerPAK® SC-70-6 Dual
  • Grade:-
  • Qualification:-

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SIA777EDJ-T1-GE3

Overview

The SiA777EDJ-T1-GE3 is a dual MOSFET from Vishay Siliconix, integrating one N-channel and one P-channel device in a single PowerPAK SC-70-6 package. The N-channel component features a drain-source voltage of 20 V and an on-resistance of 0.225 Ω at VGS = 4.5 V. The P-channel counterpart provides a drain-source voltage of -12 V with an on-resistance of 0.057 Ω at VGS = -4.5 V. Both channels operate within a junction temperature range of -55 °C to +150 °C.

Feature Summary

  • TrenchFET power technology for optimized switching performance
  • Integrated ESD protection rated at 2800 V for the N-channel and 1900 V for the P-channel
  • Halogen-free construction compliant with IEC 61249-2-21 standards

Applications

  • Load switch applications requiring level shifting for portable devices
  • N-channel configuration for level shift drive circuits
  • P-channel configuration serving as the main switch element

Procurement Notes

Verify the specific ordering suffix T1-GE3 to confirm lead-free and halogen-free compliance. Confirm that the PowerPAK SC-70-6 package dimensions match the target PCB footprint. Ensure the design accounts for the exposed copper terminals characteristic of this leadless package singulation process.

Selection Notes

Select this component when space-constrained designs require both high-side and low-side switching capabilities in a minimal footprint. The integrated nature simplifies layout compared to discrete components. Verify that the gate drive voltages align with the specified RDS(on) thresholds for optimal efficiency.

Part Context

This part belongs to the SiA777EDJ series, which pairs complementary N- and P-channel MOSFETs. It utilizes Vishay's TrenchFET technology to achieve low on-resistance within the compact PowerPAK SC-70-6 surface-mount package designed for automated assembly.

Replacement Considerations

Direct replacements must maintain the dual N/P-channel configuration and PowerPAK SC-70-6 footprint. Verify that substitute parts meet or exceed the 20 V / -12 V breakdown ratings and thermal resistance specifications.

FAQ

What is the typical ESD protection rating for the N-channel?

The N-channel typically offers ESD protection up to 2800 V.

How does the package handle soldering?

The PowerPAK SC-70 is a leadless package where the terminal ends are exposed copper; manual soldering with an iron is not recommended.

Is the device RoHS compliant?

Yes, the SiA777EDJ-T1-GE3 is compliant with the RoHS Directive 2002/95/EC and is halogen-free.

SIA777EDJ-T1-GE3SIA777EDJ-T1-GE3

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