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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 4.5A PPAK8X8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：4.5A
- Rds On (Max) @ Id, Vgs：94mOhm @ 2.8A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12.8nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds：355pF @ 10V
- Power - Max：6.5W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SC-70-6 Dual
- Supplier Device Package：PowerPAK® SC-70-6 Dual
- Grade：-
- Qualification：-
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Overview
The SIA911DJ-T1-E3 is a dual-channel P-channel MOSFET array manufactured by Vishay Siliconix. It features a 20V drain-source voltage rating and supports a continuous drain current of 4.5A per channel. The component utilizes the TrenchFET technology for optimized performance. It is housed in a compact SC-70-6 surface-mount package, suitable for space-constrained designs. The device operates within a temperature range of -55°C to 150°C junction temperature. This part is classified under Transistors - FETs, MOSFETs - Arrays.
Feature Summary
- Dual-channel P-channel configuration for efficient power switching applications
- TrenchFET technology ensures low on-resistance and high efficiency
- Compact SC-70-6 package design for space-saving PCB layouts
Applications
- Portable electronic devices requiring efficient power management
- Battery-powered equipment with limited space constraints
- General-purpose low-voltage power switching circuits
Procurement Notes
Verify the specific suffix and RoHS compliance status directly with the manufacturer or authorized distributors before procurement. Confirm that the SC-70-6 package dimensions match your PCB footprint requirements. Ensure that the thermal characteristics align with your system's heat dissipation capabilities. Cross-reference the datasheet parameters against your circuit design specifications to guarantee operational reliability under expected load conditions.
Selection Notes
Select this component when a dual P-channel MOSFET solution is required in a small form factor. The 20V rating makes it suitable for low-voltage applications such as USB-powered devices or battery-operated systems. Consider the 4.5A current capability relative to your peak load requirements. The SC-70-6 package offers a balance between size and thermal performance compared to larger packages.
Part Context
This part belongs to the SIA series of MOSFETs from Vishay Siliconix, known for utilizing TrenchFET technology. The SIA911DJ-T1-E3 specifically provides a dual-channel configuration, distinguishing it from single-channel variants in the same family. It is designed for modern electronics where space efficiency and power integrity are critical factors in component selection.
Replacement Considerations
Check for direct pin-compatible alternatives within the SIA series or other manufacturers offering similar 20V dual P-channel MOSFETs in SC-70-6 packages. Verify that any substitute maintains equivalent electrical characteristics, particularly on-resistance and current handling capabilities, to ensure circuit compatibility.
