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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 4.5A PPAK8X8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：4.5A
- Rds On (Max) @ Id, Vgs：101mOhm @ 2.7A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：7.8W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SC-70-6 Dual
- Supplier Device Package：PowerPAK® SC-70-6 Dual
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SiA911EDJ-T1-GE3 is a dual P-channel MOSFET utilizing TrenchFET technology. It features a maximum drain-source voltage of -20 V and a typical on-resistance of 0.101 Ω at VGS = -4.5 V. The device supports a continuous drain current of -4.5 A at TC = 25 °C and dissipates up to 7.8 W under the same conditions. Packaged in a thermally enhanced PowerPAK SC-70-6, it offers a total gate charge of 7.1 nC (typical) and operates within a junction temperature range of -55 °C to 150 °C.
Feature Summary
- Dual P-channel configuration with TrenchFET power MOSFET technology
- Thermally enhanced PowerPAK SC-70 leadless package for small footprint
- Halogen-free construction compliant with IEC 61249-2-21
Applications
- Load switching for portable devices
- Power amplifier (PA) switching
- Battery management switching
Procurement Notes
Verify component authenticity by cross-referencing the manufacturer's datasheet document number 68927 and revision B. Confirm that the ordering suffix indicates lead-free and halogen-free compliance. Ensure the package matches the specified PowerPAK SC-70-6 form factor before integration into supply chains.
Selection Notes
Select this component when a compact dual P-channel switch is required for low-voltage applications. Evaluate thermal resistance ratings against the specific PCB copper area available, as power dissipation capabilities are heavily dependent on surface mounting conditions and ambient temperature constraints.
Part Context
This part belongs to the SiA series of power MOSFETs manufactured by Vishay Siliconix. It utilizes the PowerPAK SC-70 package, which provides a leadless design optimized for high-density surface mount applications. The dual configuration allows for efficient space utilization in circuits requiring multiple switching elements.
Replacement Considerations
Direct substitutes must match the dual P-channel topology, -20 V rating, and PowerPAK SC-70-6 package dimensions. Verify that any alternative component maintains comparable on-resistance and thermal performance characteristics.
