SIA913ADJ-T1-GE3

$0.75

Description：MOSFET 2P-CH 12V 4.5A PPAK8X8
Series：TrenchFET®

SKU:f3ff67ec4dee Category: FET, MOSFET Arrays Brand: Vishay Siliconix

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 12V 4.5A PPAK8X8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：12V
Current - Continuous Drain (Id) @ 25°C：4.5A
Rds On (Max) @ Id, Vgs：61mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds：590pF @ 6V
Power - Max：6.5W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：PowerPAK® SC-70-6 Dual
Supplier Device Package：PowerPAK® SC-70-6 Dual
Grade：-
Qualification：-

Download product information

SIA913ADJ-T1-GE3

Overview

The SiA913ADJ-T1-GE3 is a dual P-channel enhancement mode MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a maximum drain-source voltage (VDS) of -12 V and a continuous drain current (ID) of -4.5 A at 25 °C case temperature. The device offers low on-state resistance, specified as 0.061 Ω at VGS = -4.5 V and 0.081 Ω at VGS = -2.5 V. Total gate charge (Qg) is typically 8.2 nC at VGS = -4.5 V. It is housed in a thermally enhanced PowerPAK SC-70-6L surface-mount package with a junction-to-ambient thermal resistance (RthJA) of up to 65 °C/W.

Feature Summary

Dual P-channel configuration within a single leadless PowerPAK SC-70-6L package
TrenchFET power MOSFET technology for optimized performance
Thermally enhanced design providing low on-resistance and small footprint

Applications

Load switching for portable devices
Power amplifier (PA) switching
Battery switching applications

Procurement Notes

Verify the component against official datasheet document number 64723 to confirm specifications. Ensure the ordering suffix matches the lead-free and halogen-free requirement (-T1-GE3). Validate that the package type corresponds to the PowerPAK SC-70-6L dual configuration before integration into designs.

Selection Notes

Select this component for low-voltage applications requiring dual P-channel control in a minimal footprint. Evaluate the -12 V breakdown voltage and -4.5 A current limits against circuit requirements. Consider the 65 °C/W junction-to-ambient thermal resistance for heat dissipation planning in space-constrained portable electronics.

Part Context

This part belongs to the SiA series of dual MOSFETs manufactured by Vishay Siliconix. It utilizes the PowerPAK SC-70-6L package, which is designed for surface mounting on FR4 boards. The device integrates two independent P-channel MOSFETs to save board space compared to discrete solutions.