SIA913DJ-T1-GE3

Overview

The SIA913DJ-T1-GE3 is a single N-channel MOSFET from the Vishay Siliconix SIA series, utilizing TrenchFET technology. It features a 30V drain-source voltage rating and a continuous drain current of 4.5A. The device offers a maximum on-resistance of 65 milliohms at a gate-source voltage of 10V. Packaged in a compact PowerPAK SC-70 (SC-70-6) surface-mount footprint, it supports a maximum power dissipation of 1.2W. The component operates within a temperature range of -55°C to +150°C junction temperature.

Feature Summary

• TrenchFET technology for optimized low on-resistance
• Compact PowerPAK SC-70 surface-mount package
• Enhancement mode N-channel configuration

Applications

• DC-DC converter output rectification
• Load switching applications
• Power management circuits

Procurement Notes

Verify the specific datasheet revision and manufacturer documentation before integration. Confirm that the PowerPAK SC-70 thermal characteristics meet the system's heat dissipation requirements. Ensure compatibility with standard surface-mount assembly processes. Check for any RoHS compliance declarations relevant to the manufacturing date code.

Selection Notes

Select this component for low-voltage, high-efficiency switching applications requiring a small form factor. Compare the 65 milliohm on-resistance against circuit loss tolerances. Evaluate the 4.5A current limit against peak load demands. Consider the SC-70 package constraints for PCB layout and thermal vias.

Part Context

This part belongs to the SIA series of N-channel MOSFETs designed for portable and battery-powered devices. The series emphasizes low profile and fast switching speeds. The SIA913DJ variant specifically targets 30V logic-level control environments. It complements other SIA parts offering different voltage or current ratings within the same package family.