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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 4.5A PPAK8X8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：4.5A
- Rds On (Max) @ Id, Vgs：53mOhm @ 3.7A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11.5nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds：400pF @ 10V
- Power - Max：6.5W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SC-70-6 Dual
- Supplier Device Package：PowerPAK® SC-70-6 Dual
- Grade：-
- Qualification：-
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Overview
The SiA914DJ is a dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a PowerPAK SC-70-6 package with a drain-source voltage (VDS) of 20 V and a continuous drain current (ID) of 4.5 A at 25 °C case temperature. The on-state resistance (RDS(on)) ranges from 0.043 Ω to 0.077 Ω depending on the gate-source voltage (VGS). Key dynamic parameters include a typical total gate charge (Qg) of 4.1 nC at VGS = 4.5 V and 7 nC at VGS = 8 V. The device operates within a junction temperature range of -55 °C to +150 °C.
Feature Summary
- Dual N-channel configuration in a thermally enhanced leadless PowerPAK SC-70 package
- TrenchFET power MOSFET technology for low on-resistance
- Halogen-free construction
Applications
- Load switching for portable applications
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for specific lot traceability requirements. Ensure storage conditions align with moisture sensitivity levels before soldering. Validate that the ordering suffix matches the required halogen-free and lead-free specifications.
Selection Notes
Select this component for designs requiring compact dual-switch solutions with low gate charge. Evaluate thermal performance against the specified junction-to-ambient resistance. Verify that the operating voltage remains below the 20 V breakdown limit. Consider the package's thermal limitations when determining maximum continuous current ratings under ambient conditions.
Part Context
This part belongs to the SiA series of dual N-channel MOSFETs manufactured by Vishay Siliconix. It utilizes the PowerPAK SC-70 footprint, designed for space-constrained surface-mount applications. The product line emphasizes low on-resistance and fast switching capabilities suitable for portable electronics.
Replacement Considerations
Check datasheets for alternative dual N-channel MOSFETs in the PowerPAK SC-70-6 package. Ensure replacement parts match the 20 V VDS rating and similar RDS(on) characteristics. Verify pinout compatibility and thermal resistance values to maintain circuit performance.
