SIA914DJ-T1-GE3

Overview

The SiA914DJ-T1-GE3 is a dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a PowerPAK SC-70-6 package with a drain-source voltage (VDS) of 20 V and a gate-source voltage (VGS) rating of ±8 V. The device provides a continuous drain current (ID) of 4.5 A at 25 °C case temperature. On-state resistance (RDS(on)) ranges from 0.043 Ω to 0.077 Ω depending on the gate drive voltage. Total gate charge (Qg) is typically 4.1 nC at VGS = 4.5 V. Operating junction and storage temperatures span from -55 °C to +150 °C.

Feature Summary

• Dual N-channel configuration in a thermally enhanced leadless PowerPAK SC-70 package
• TrenchFET power MOSFET technology for low on-resistance
• Halogen-free construction

Applications

• Load switching for portable applications

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance and halogen-free status against current datasheet revisions. Ensure proper handling procedures are followed due to the leadless package design, which requires specific soldering profiles to guarantee adequate interconnection without relying on terminal plating.

Selection Notes

Evaluate thermal management requirements carefully, as the small footprint limits steady-state power dissipation. Verify that the application's gate drive voltage aligns with the specified RDS(on) test conditions to ensure optimal performance. Consider the maximum junction-to-ambient thermal resistance when designing PCB layouts without additional heatsinking capabilities.

Part Context

This component belongs to the SiA914DJ series manufactured by Vishay / Siliconix. It is part of the broader portfolio of TrenchFET power MOSFETs designed for compact surface-mount applications. The specific ordering suffix indicates lead-free and halogen-free manufacturing standards compliant with environmental directives.

Replacement Considerations

Cross-reference with other Vishay dual N-channel MOSFETs in the PowerPAK SC-70 family. Verify pinout compatibility and electrical parameters such as VDS, ID, and RDS(on) before substitution. Ensure the replacement device meets the same thermal and packaging constraints.

FAQ

What is the maximum gate-source voltage rating?

The absolute maximum gate-source voltage (VGS) is rated at ±8 V.

How does the on-resistance vary with gate voltage?

RDS(on) decreases as gate voltage increases, ranging from 0.077 Ω at VGS = 1.8 V to 0.043 Ω at VGS = 4.5 V.

Is this component suitable for high-temperature environments?

Yes, the operating junction and storage temperature range extends up to +150 °C.