SIA918EDJ-T1-GE3

$0.46

Description：MOSFET 2N-CH 30V 4.5A PPAK8X8
Series：TrenchFET®

SKU:ad051fbc8ff1 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 4.5A PPAK8X8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：4.5A (Tc)
Rds On (Max) @ Id, Vgs：58mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id：900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：5.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：7.8W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：PowerPAK® SC-70-6 Dual
Supplier Device Package：PowerPAK® SC-70-6 Dual
Grade：-
Qualification：-

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SIA918EDJ-T1-GE3

Overview

The SiA918EDJ-T1-GE3 is a dual N-channel 30 V (D-S) MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET power technology and is housed in a thermally enhanced PowerPAK SC-70 package with a small footprint area. The device features low on-resistance, typical ESD protection of 1000 V (HBM), and 100% Rg testing. Key electrical parameters include a maximum drain-source voltage of 30 V, a continuous drain current of 4.5 A at TC = 25 °C, and a maximum power dissipation of 7.8 W at TC = 25 °C. On-state resistance is specified as 0.058 Ω max at VGS = 4.5 V, 0.065 Ω max at VGS = 2.5 V, and 0.077 Ω max at VGS = 1.8 V. Typical gate charge is 3.6 nC at VGS = 4.5 V.

Feature Summary

TrenchFET power MOSFET technology for optimized performance
Thermally enhanced PowerPAK SC-70 package with small footprint area
Typical ESD protection rating of 1000 V (HBM)
100% Rg tested to ensure reliability

Applications

Load switch applications in portable devices
DC/DC converter circuits
Power management systems in smart phones, tablet PCs, and mobile computing

Procurement Notes

Verify the exact ordering suffix against official Vishay documentation to confirm lead-free and halogen-free compliance. Confirm package type and pinout alignment with the PowerPAK SC-70-6L Dual specification before procurement. Ensure storage and handling procedures meet ESD protection standards given the component's sensitivity.

Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage, high-current applications. Evaluate thermal resistance ratings and junction temperature limits against the specific operating environment. Verify that the gate drive voltage aligns with the specified on-resistance thresholds for optimal efficiency.

Part Context

The SiA918EDJ belongs to Vishay Siliconix's portfolio of dual MOSFETs designed for space-constrained portable electronics. It shares the PowerPAK SC-70 form factor common across various Vishay surface-mount components, prioritizing thermal performance and low profile within a minimal board footprint.