SIA920DJ-T1-GE3

Description：MOSFET 2N-CH 8V 4.5A PPAK8X8
Series：TrenchFET®

SKU:7995b872b675 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 8V 4.5A PPAK8X8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：8V
Current - Continuous Drain (Id) @ 25°C：4.5A
Rds On (Max) @ Id, Vgs：27mOhm @ 5.3A, 4.5V
Vgs(th) (Max) @ Id：700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：7.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：470pF @ 4V
Power - Max：7.8W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：PowerPAK® SC-70-6 Dual
Supplier Device Package：PowerPAK® SC-70-6 Dual
Grade：-
Qualification：-

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SIA920DJ-T1-GE3

Overview

The SiA920DJ-T1-GE3 is a dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features an 8 V drain-source voltage rating and operates within a -55 °C to +150 °C temperature range. The device is housed in a thermally enhanced PowerPAK SC-70-6L package. Key electrical parameters include a maximum continuous drain current of 4.5 A at 25 °C case temperature and a typical total gate charge of 4.8 nC. On-state resistance varies with gate voltage, ranging from 0.027 Ω at VGS = 4.5 V to 0.110 Ω at VGS = 1.2 V.

Feature Summary

Dual N-channel configuration integrated into a single compact component
TrenchFET power technology designed for low on-resistance performance
Thermally enhanced PowerPAK SC-70 leadless package for small footprint applications

Applications

Load switch with low voltage drop requirements
Load switching for 1.2 V, 1.5 V, and 1.8 V power lines
Smart phones, tablet PCs, and portable media players

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm compliance status. Ensure that the requested part number matches the exact manufacturer designation. Confirm RoHS directive compliance and halogen-free status through verified datasheets or authorized distributor channels before finalizing procurement decisions.

Selection Notes

Evaluate the 8 V breakdown voltage limit to ensure compatibility with system supply rails. Consider the thermal resistance characteristics when designing PCB layouts for heat dissipation. Verify that the required gate drive voltage aligns with the specified RDS(on) thresholds for optimal efficiency in the target application environment.

Part Context

This component belongs to the SiA series of dual N-channel MOSFETs manufactured by Vishay Siliconix. It utilizes TrenchFET technology to achieve low on-resistance within a compact PowerPAK SC-70-6L package. The device is specifically engineered for space-constrained portable electronics requiring efficient load switching capabilities.