SIA921EDJ-T1-GE3

SIA921EDJ-T1-GE3

$0.85
  • Description:MOSFET 2P-CH 20V 4.5A PPAK8X8
  • Series:TrenchFET®

SKU:1d1625f8ceb7 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2P-CH 20V 4.5A PPAK8X8
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:4.5A
  • Rds On (Max) @ Id, Vgs:59mOhm @ 3.6A, 4.5V
  • Vgs(th) (Max) @ Id:1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Power - Max:7.8W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:PowerPAK® SC-70-6 Dual
  • Supplier Device Package:PowerPAK® SC-70-6 Dual
  • Grade:-
  • Qualification:-

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SIA921EDJ-T1-GE3

Overview

The Vishay Siliconix SiA921EDJ-T1-GE3 is a dual P-channel MOSFET utilizing TrenchFET technology, housed in a thermally enhanced PowerPAK SC-70 package. It features a drain-source voltage of -20 V and a continuous drain current of -4.5 A at 25 °C case temperature. The on-state resistance is typically 0.059 Ω at VGS = -4.5 V and 0.098 Ω at VGS = -2.5 V. Total gate charge is typically 15 nC at VGS = -10 V. Operating junction temperatures range from -55 °C to 150 °C, with maximum power dissipation rated at 7.8 W at TC = 25 °C.

Feature Summary

  • Dual P-channel configuration within a compact leadless PowerPAK SC-70 footprint
  • TrenchFET technology providing low on-resistance and high-speed switching capabilities
  • Thermal enhancement designed for efficient heat dissipation in surface-mount applications

Applications

  • Load switching for portable devices
  • Power amplifier (PA) switching circuits
  • Battery management switches
  • DC/DC converter topologies

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging format. The -T1 suffix indicates tape and reel packaging, while other suffixes may denote cut tape or different handling methods. Confirm RoHS compliance status through the manufacturer's latest datasheet revision. Ensure component authenticity by checking markings and lot traceability codes directly on the device surface.

Selection Notes

Select this component when a dual P-channel solution is required in a minimal footprint. Evaluate thermal performance based on the application's ambient conditions and PCB copper area, as power dissipation is significantly affected by junction-to-ambient resistance. Verify that the gate drive voltage meets the threshold requirements for the desired on-state resistance level. Consider the body diode reverse recovery characteristics if used in synchronous rectification or inductive load switching scenarios.

Part Context

This part belongs to the SiA series of dual MOSFETs from Vishay Siliconix. It utilizes the PowerPAK SC-70 package, which is distinct from single-channel variants or larger packages like PowerPAK SO-8. The dual configuration allows for space-efficient designs requiring two independent P-channel switches within a single six-terminal leadless housing.

Replacement Considerations

Direct pin-compatible replacements must match the -20 V rating, dual P-channel topology, and PowerPAK SC-70-6L package dimensions. Verify thermal resistance and on-resistance specifications to ensure equivalent performance. Cross-reference with Vishay's recommended alternate parts list for any officially designated substitutes.

SIA921EDJ-T1-GE3SIA921EDJ-T1-GE3
$0.85
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