SIA923AEDJ-T1-GE3

Overview

The SIA923AEDJ-T1-GE3 is a dual P-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a PowerPAK SC-70-6L package with a drain-source voltage (VDS) of -20 V and a continuous drain current (ID) of -4.5 A at TC = 25 °C. The maximum on-resistance (RDS(on)) is 0.054 Ω at VGS = -4.5 V and -3.8 A. Total gate charge (Qg) is typically 9.5 nC at VGS = -4.5 V. Operating junction temperature ranges from -55 °C to +150 °C.

Feature Summary

• Dual P-channel configuration in a thermally enhanced leadless PowerPAK SC-70 package
• TrenchFET power MOSFET technology for low on-resistance
• Typical ESD protection rating of 2500 V

Applications

• Charger switches for portable devices
• Load switches for portable devices
• DC/DC converters

Procurement Notes

Verify the component against the official Vishay datasheet document number 62936. Confirm that the marking code matches 'DP' and the ordering suffix indicates lead-free and halogen-free compliance. Ensure the package type corresponds to the PowerPAK SC-70-6L Dual specification before integration.

Selection Notes

Select this component for applications requiring dual P-channel switching within a compact footprint. Evaluate thermal performance based on the specified junction-to-ambient resistance. Verify that the required gate drive voltage aligns with the RDS(on) specifications provided for different VGS levels.

Part Context

This part belongs to the SiA series of TrenchFET MOSFETs manufactured by Vishay Siliconix. It is designed for high-efficiency power management in space-constrained environments. The product utilizes advanced silicon technology to minimize conduction losses while maintaining robust switching characteristics.

Replacement Considerations

No public confirmed substitute part numbers are available in the source material.