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The SiA923EDJ-T1-GE3 is a dual P-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a PowerPAK SC-70-6L package with two independent channels. The device supports a drain-source voltage of -20 V and a continuous drain current of -4.5 A at 25 °C case temperature. On-resistance is specified as 0.054 Ω at VGS = -4.5 V and ID = -3.8 A. Operating junction temperature ranges from -55 °C to +150 °C.
Verify the component marking code 'D K X' against the datasheet to confirm authenticity. Ensure the ordering suffix matches the lead-free and halogen-free specification. Confirm that the package type corresponds to the PowerPAK SC-70-6L dual variant before finalizing procurement orders.
Select this component when a compact dual P-channel solution is required for low-voltage applications. The -20 V rating suits standard logic-level interfaces. Evaluate thermal resistance limits carefully, as the small package restricts steady-state power dissipation compared to larger packages.
This part belongs to the SiA series of Vishay Siliconix MOSFETs. It is specifically designed as a dual-channel alternative to single-channel counterparts, saving board space in dense portable electronics designs while maintaining comparable electrical performance characteristics.
SiA923EDJ-T1-GE3