SIA923EDJ-T1-GE3

SIA923EDJ-T1-GE3

$0.86
  • Description:MOSFET 2P-CH 20V 4.5A PPAK8X8
  • Series:TrenchFET®

SKU:1b527d6f1b2e Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2P-CH 20V 4.5A PPAK8X8
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:4.5A
  • Rds On (Max) @ Id, Vgs:54mOhm @ 3.8A, 4.5V
  • Vgs(th) (Max) @ Id:1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:25nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Power - Max:7.8W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:PowerPAK® SC-70-6 Dual
  • Supplier Device Package:PowerPAK® SC-70-6 Dual
  • Grade:-
  • Qualification:-

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SIA923EDJ-T1-GE3

Overview

The SiA923EDJ-T1-GE3 is a dual P-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a PowerPAK SC-70-6L package with two independent channels. The device supports a drain-source voltage of -20 V and a continuous drain current of -4.5 A at 25 °C case temperature. On-resistance is specified as 0.054 Ω at VGS = -4.5 V and ID = -3.8 A. Operating junction temperature ranges from -55 °C to +150 °C.

Feature Summary

  • Dual P-channel configuration within a single leadless package
  • TrenchFET power MOSFET architecture for low on-resistance
  • Thermally enhanced PowerPAK SC-70-6L footprint

Applications

  • Charger switches for portable devices
  • Load switches for portable devices
  • DC/DC converters

Procurement Notes

Verify the component marking code 'D K X' against the datasheet to confirm authenticity. Ensure the ordering suffix matches the lead-free and halogen-free specification. Confirm that the package type corresponds to the PowerPAK SC-70-6L dual variant before finalizing procurement orders.

Selection Notes

Select this component when a compact dual P-channel solution is required for low-voltage applications. The -20 V rating suits standard logic-level interfaces. Evaluate thermal resistance limits carefully, as the small package restricts steady-state power dissipation compared to larger packages.

Part Context

This part belongs to the SiA series of Vishay Siliconix MOSFETs. It is specifically designed as a dual-channel alternative to single-channel counterparts, saving board space in dense portable electronics designs while maintaining comparable electrical performance characteristics.

Replacement Considerations

SiA923EDJ-T1-GE3

SIA923EDJ-T1-GE3SIA923EDJ-T1-GE3
$0.86
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