SIA923EDJ-T4-GE3

$0.86

Description：MOSFET 2P-CH 20V 4.5A PPAK8X8
Series：TrenchFET®

SKU:85e42809659f Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 20V 4.5A PPAK8X8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：4.5A (Ta), 4.5A (Tc)
Rds On (Max) @ Id, Vgs：54mOhm @ 3.8A, 4.5V
Vgs(th) (Max) @ Id：1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：25nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：1.9W (Ta), 7.8W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：PowerPAK® SC-70-6 Dual
Supplier Device Package：PowerPAK® SC-70-6 Dual
Grade：-
Qualification：-

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SIA923EDJ-T4-GE3

Overview

The Vishay Siliconix SiA923EDJ is a dual P-Channel MOSFET featuring TrenchFET technology in a PowerPAK SC-70-6L package. It provides a drain-source voltage (VDS) of -20 V and continuous drain current (ID) of -4.5 A at TC = 25 °C. The on-state resistance (RDS(on)) is typically 0.054 Ω at VGS = -4.5 V and ID = -3.8 A, or 0.104 Ω at VGS = -1.8 V. Total gate charge (Qg) is typically 9.5 nC at VGS = -4.5 V. Thermal resistance from junction to case (RthJC) is 12.5 °C/W typical. Operating temperature range spans -55 °C to +150 °C.

Feature Summary

Dual P-Channel configuration with independent gates for compact integration
TrenchFET power MOSFET technology ensuring low on-resistance
Thermally enhanced PowerPAK SC-70-6L leadless package design

Applications

Charger switches and load switches for portable devices
DC/DC converters

Procurement Notes

Verify the specific ordering suffix against the manufacturer's documentation to confirm packaging format and compliance status. The datasheet lists SiA923EDJ-T1-GE3 as the lead-free and halogen-free variant. Ensure the component meets RoHS Directive 2002/95/EC requirements if applicable to your manufacturing process. Cross-reference the marking code and lot traceability details during incoming inspection.

Selection Notes

Select this component for applications requiring dual P-channel switching within a minimal footprint. Evaluate thermal management strategies based on the junction-to-ambient resistance of 65 °C/W maximum. Confirm that the gate drive voltage aligns with the specified RDS(on) conditions, particularly for low-voltage logic interfaces where VGS may be limited to -1.8 V or lower.

Part Context

This device belongs to the SiA series of TrenchFET MOSFETs manufactured by Vishay Siliconix. It utilizes the PowerPAK SC-70-6L package, which offers a small footprint area suitable for space-constrained designs. The product line emphasizes low on-resistance and high thermal efficiency for portable electronics.