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Product Detailed Parameters
- Description：MOSFET 2P-CH 30V 4.5A PPAK8X8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：4.5A
- Rds On (Max) @ Id, Vgs：65mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：445pF @ 15V
- Power - Max：7.8W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SC-70-6 Dual
- Supplier Device Package：PowerPAK® SC-70-6 Dual
- Grade：-
- Qualification：-
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Overview
The SiA931DJ is a dual P-channel enhancement mode MOSFET from Vishay Siliconix, utilizing TrenchFET Gen III technology. It features a thermally enhanced PowerPAK SC-70 package with a footprint of 2.05 mm by 2.05 mm. The device supports a drain-source voltage (VDS) of -30 V and a continuous drain current (ID) of -4.5 A at TC = 25 °C. Maximum on-resistance (RDS(on)) values are specified as 65 mΩ at VGS = -10 V, 80 mΩ at VGS = -6 V, and 100 mΩ at VGS = -4.5 V. Total gate charge (Qg) is typically 4.1 nC at VGS = -4.5 V. Operating junction temperature ranges from -55 °C to +150 °C.
Feature Summary
- TrenchFET Gen III power MOSFET architecture for low on-resistance
- Thermally enhanced PowerPAK SC-70 leadless package design
- Small footprint area optimized for surface mount applications
Applications
- Battery switches in mobile devices
- Load switches for power management
- DC/DC converters in tablet PCs and smartphones
Procurement Notes
Verify the component against the official Vishay datasheet document number 62859 to confirm technical specifications. Ensure that the ordering suffix matches the required lead-free and halogen-free configuration. Cross-reference the marking code DO with the specific manufacturing lot to validate authenticity. Confirm compliance with RoHS directives before finalizing procurement orders.
Selection Notes
Select this component when a compact dual P-channel solution is required for low-voltage switching. Evaluate thermal resistance ratings against the expected ambient conditions and PCB copper area. Verify that the gate drive voltage meets the minimum threshold for the desired on-resistance level. Consider the total gate charge requirements for high-frequency switching applications.
Part Context
This part belongs to the SiA series of dual MOSFETs manufactured by Vishay Siliconix. It utilizes the PowerPAK SC-70 package family, which provides a small outline for space-constrained designs. The TrenchFET technology differentiates it from standard planar MOSFETs by offering improved performance characteristics within the same physical dimensions.
Replacement Considerations
Check for direct replacements within the SiA series that share the PowerPAK SC-70 footprint. Verify pinout compatibility and electrical parameters such as RDS(on) and VDS before substitution. Ensure any alternative component meets the same thermal and voltage requirements.
