SIA936EDJ-T1-GE3

Overview

The Vishay Siliconix SiA936EDJ-T1-GE3 is a dual N-channel MOSFET utilizing TrenchFET technology, housed in a thermally enhanced PowerPAK SC-70 package. It features a drain-source voltage (VDS) of 20 V and a continuous drain current (ID) of 4.5 A at TC = 25 °C. The on-state resistance (RDS(on)) is specified as 34 mΩ max at VGS = 4.5 V with ID = 4 A, and 45 mΩ max at VGS = 2.5 V with ID = 3 A. Total gate charge (Qg) is typically 5.4 nC at VGS = 4.5 V. The device supports an operating junction temperature range from -55 °C to +150 °C.

Feature Summary

• TrenchFET power MOSFET architecture providing low on-resistance
• Thermally enhanced PowerPAK SC-70 package with small footprint area
• Typical ESD protection rating of 2000 V (HBM)
• 100% Rg tested for reliability

Applications

• Load switch applications in portable devices
• DC/DC converter circuits
• Power management systems in mobile computing

Procurement Notes

Verify the component marking code CK against the datasheet to confirm authenticity. Ensure the ordering suffix matches GE3 for lead-free and halogen-free compliance. Confirm the package type is PowerPAK SC-70-6L Dual. Check RoHS directive compliance documentation if required by specific project standards.

Selection Notes

Select this component for applications requiring a compact dual N-channel solution with low gate charge. Verify that the 20 V drain-source voltage rating meets the circuit requirements. Consider the thermal resistance ratings when designing heat dissipation strategies for high-current loads.

Part Context

This part belongs to the SiA936EDJ series from Vishay Siliconix. It is designed specifically for portable electronics such as smartphones and tablet PCs. The PowerPAK SC-70 package allows for efficient space utilization on printed circuit boards while maintaining adequate thermal performance.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.