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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 4.5A PPAK8X8
- Series：TrenchFET® Gen IV
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：4.5A (Ta), 4.5A (Tc)
- Rds On (Max) @ Id, Vgs：21.5mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：425pF @ 10V
- Power - Max：1.9W (Ta), 7.8W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SC-70-6 Dual
- Supplier Device Package：PowerPAK® SC-70-6 Dual
- Grade：-
- Qualification：-
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Overview
The SiA938DJT is a dual N-channel 20 V (D-S) MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET Gen IV technology to achieve very low RDS(on) and an excellent RDS x Qg Figure-of-Merit within a compact PowerPAK SC-70-6L package. The device supports a continuous drain current of 4.5 A at TA = 25 °C and offers a maximum power dissipation of 7.8 W at TC = 25 °C. Key electrical parameters include a typical gate charge of 3.5 nC at VGS = 4.5 V, a maximum on-state resistance of 0.0215 Ω at VGS = 10 V, and a junction temperature range from -55 °C to +150 °C.
Feature Summary
- Dual N-channel configuration in an ultra-compact PowerPAK SC-70-6L footprint
- TrenchFET Gen IV technology for optimized switching performance
- Low thermal resistance for efficient heat dissipation
Applications
- Synchronous rectification
- Half-bridge power stage
- DC/DC converters
- Battery management systems
- Load switch applications
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm lead-free and halogen-free compliance status. Ensure that the component marking code matches the expected identifier for this part number. Confirm that the package type aligns with the required PCB layout specifications before finalizing procurement orders.
Selection Notes
Select this component for designs requiring dual N-channel MOSFETs in space-constrained environments. Evaluate the thermal resistance ratings against the expected operating conditions to ensure adequate heat dissipation. Consider the gate charge characteristics when designing drive circuits for high-frequency switching applications.
Part Context
This component belongs to the SiA series of power MOSFETs from Vishay Siliconix. It is designed for general-purpose power management applications where size and efficiency are critical. The PowerPAK SC-70 package provides a small outline while maintaining robust electrical performance.
Replacement Considerations
Consult official Vishay documentation for verified substitute part numbers. Do not assume cross-compatibility with other series without verifying pinout, voltage ratings, and thermal characteristics.
