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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 1.5A PPAK8X8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：1.5A
- Rds On (Max) @ Id, Vgs：225mOhm @ 1.6A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：3.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SC-75-6L Dual
- Supplier Device Package：PowerPAK® SC-75-6L Dual
- Grade：-
- Qualification：-
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Overview
The SIB900EDK-T1-GE3 is a single N-channel enhancement mode field effect transistor manufactured by Vishay Siliconix. It utilizes TrenchFET technology and is housed in an SC-75 (SOT-363) surface-mount package. The device features a drain-source breakdown voltage of 30V and a continuous drain current rating of 4.5A. Key electrical parameters include a maximum on-resistance of 28 milliohms at a gate-source voltage of 10V, with a typical gate charge of 7.5 nanocoulombs. It operates within a temperature range of -55°C to +150°C junction temperature.
Feature Summary
- TrenchFET power MOSFET technology for optimized performance
- Lead-free finish and halogen-free construction
- RoHS compliant manufacturing process
Applications
- Load switching in portable multimedia devices
- Power management circuits in smartphones
- DC-DC converter output stages
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets current RoHS directives and material declarations required for your assembly process before finalizing procurement orders.
Selection Notes
Select this component when a low-profile N-channel MOSFET with high current capability is required for space-constrained designs. Ensure the application voltage remains below the 30V drain-source limit and verify that the thermal design accommodates the power dissipation characteristics of the SC-75 package under expected operating conditions.
Part Context
This part belongs to the SIB series of TrenchFET power MOSFETs from Vishay Siliconix. These components are designed for high-density applications requiring small footprint solutions. The SC-75 package provides a compact form factor suitable for modern consumer electronics where board space is limited.
Replacement Considerations
Consult official cross-reference data for verified substitutes. Ensure any replacement matches the 30V Vds, 4.5A Id, and SC-75 package dimensions to maintain mechanical and electrical compatibility.
