SICW060N120H4-BP

Single FETs, MOSFETs Overview

The SICW060N120H4-BP is a Silicon Carbide (SiC) N-Channel MOSFET manufactured by Micro Commercial Components. It features a 1200 V drain-source breakdown voltage and a continuous drain current of 44.5 A at case temperature. The device utilizes a TO-247-3 package for through-hole mounting. Key electrical parameters include a maximum power dissipation of 250 W at case temperature, a gate-source voltage range of -10 V to +25 V, and a threshold voltage typically around 3 V. The component operates within a junction temperature range of -55 °C to +175 °C.

Single FETs, MOSFETs Feature Summary

• Utilizes silicon carbide semiconductor technology for high-temperature operation
• Designed for low on-resistance and fast switching performance
• Robust packaging suitable for thermal management in power applications

Single FETs, MOSFETs Applications

• High-frequency power conversion systems
• Industrial motor drives and inverters
• Uninterruptible power supplies (UPS)
• Solar micro-inverters and string inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix and package variant against the official datasheet before ordering. Confirm availability status with authorized distributors as supply may be restricted. Ensure compatibility with existing thermal design requirements given the TO-247 form factor. Cross-reference part numbers to avoid confusion with similar series components from the same manufacturer.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high voltage blocking capability and efficient thermal handling. Consider the 1200 V rating for medium-voltage AC/DC interfaces. Evaluate the 44.5 A current capacity against peak load requirements. Ensure gate drive voltages remain within the specified ±25 V limit to prevent device damage.

Single FETs, MOSFETs Part Context

This part belongs to the SICW series of silicon carbide MOSFETs from Micro Commercial Components. The series targets high-efficiency power electronics. The H4 designation typically indicates specific process or package variations within the lineup. These devices are engineered to replace traditional silicon counterparts in demanding environments.

Single FETs, MOSFETs Replacement Considerations

Check for direct substitutes such as SICW040N120H4-BP or SICW120N120H-BP if current ratings differ. Verify pinout compatibility with the TO-247-3 footprint. Ensure replacement parts meet the same 1200 V voltage class and thermal dissipation standards.