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SIDR608EP-T1-RE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is N-CHANNEL 45 V (D-S) 175C MOSFET. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SIDR608EP-T1-RE3
- Description：N-CHANNEL 45 V (D-S) 175C MOSFET
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：45 V
- Current - Continuous Drain (Id) @ 25°C：56A (Ta), 228A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1.2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：167 nC @ 10 V
- Vgs (Max)：+20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds：8900 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：7.5W (Ta), 125W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerPAK® SO-8DC
- Package / Case：PowerPAK® SO-8
Single FETs, MOSFETs datasheet and documents for SIDR608EP-T1-RE3
Single FETs, MOSFETs Overview
The SiDR608EP is a Vishay Siliconix N-channel enhancement mode MOSFET utilizing TrenchFET Gen IV technology. It features a 45 V drain-source breakdown voltage and operates up to a 175 °C junction temperature. The device provides a maximum continuous drain current of 228 A at TC = 25 °C, with a typical on-state resistance of 1.0 mΩ at VGS = 10 V and 1.36 mΩ at VGS = 4.5 V. Packaged in a leadless PowerPAK SO-8DC, it supports high-power density applications.
Single FETs, MOSFETs Feature Summary
- TrenchFET Gen IV power MOSFET architecture
- Optimized for low total gate charge and output charge
- 100% tested for gate resistance and single pulse avalanche energy
Single FETs, MOSFETs Applications
- Synchronous rectification
- High power density DC/DC converters
- Motor drive control
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix '-T1-RE3' against official documentation to confirm lead-free and halogen-free compliance status. Ensure that the PowerPAK SO-8DC package requirements are met, particularly regarding the exposed copper terminal conditions and recommended soldering profiles. Confirm thermal management capabilities align with the specified junction-to-case resistance ratings.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring high current handling within a compact surface-mount footprint. Evaluate the trade-off between the low on-resistance and the optimized gate charge for switching efficiency. Consider the dual cooling capability of the PowerPAK SO-8DC package for effective thermal dissipation in space-constrained environments.
Single FETs, MOSFETs Part Context
This part belongs to the SiDR series of Vishay Siliconix N-channel MOSFETs. It utilizes the PowerPAK SO-8DC leadless package, which offers enhanced thermal performance compared to standard packages. The device is designed for robust operation in demanding power electronics applications requiring high reliability and efficient heat transfer.
Single FETs, MOSFETs Replacement Considerations
Consult official Vishay cross-reference documentation for verified substitute part numbers. Do not assume compatibility based solely on similar voltage or current ratings without verifying pinout and thermal characteristics.
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