SIGC04T60EX1SA2

Description：IGBT TRENCH FS 600V 6A DIE
Series：TrenchStop™

SKU:69cb0706026b Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 600V 6A DIE
Series：TrenchStop™
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：6:00 AM
Current - Collector Pulsed (Icm)：18 A
Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 6A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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SIGC04T60EX1SA2

Overview

The SIGC04T60EX1SA2 is a bare die IGBT chip utilizing TRENCHSTOP™ IGBT3 technology with a 600 V collector-emitter voltage rating. It features a die size of 1.98 mm x 1.96 mm and operates within a virtual junction temperature range of -40 °C to +175 °C. The device exhibits a maximum DC collector current of 1 A and a pulsed collector current of 18 A. Static characteristics include a typical collector-emitter saturation voltage (VCEsat) of 1.5 V at 6 A, and a gate-emitter threshold voltage (VGE(th)) of 5.8 V. Electrical parameters measured on the wafer at 25 °C show an input capacitance (Cies) of 368 pF, output capacitance (Coes) of 28 pF, and reverse transfer capacitance (Cres) of 11 pF.

Feature Summary

Utilizes 600 V trench & field stop technology for low VCEsat and short tail current.
Features a positive temperature coefficient enabling easy paralleling in power modules.
Designed specifically for integration into power modules and discrete components.

Applications

Industrial drives
White goods inverters
Resonant applications

Procurement Notes

Verify the specific ordering suffix against Infineon's official documentation to confirm material content and packaging specifications. Ensure compliance with storage environment requirements for sealed MBB bags, maintaining temperatures between 17°C and 25°C. Confirm that the component meets all necessary reliability standards for the intended industrial application before procurement.

Selection Notes

Select this bare die for designs requiring high power density and efficient thermal management in modular configurations. Consider the 1 A continuous current rating and 6 µs short circuit withstand time when designing protection circuits. Evaluate the need for electrically conductive epoxy glue or soft solder for reliable die bonding during assembly.

Part Context

This component belongs to Infineon's TRENCHSTOP™ IGBT3 family, which employs trench gate and field stop technologies to optimize switching losses and conduction voltage. The bare die format allows system integrators to customize module architectures, facilitating tailored solutions for specific drive and appliance applications while leveraging advanced silicon performance.

Replacement Considerations

Direct replacement requires matching the 600 V rating, 1.98 mm x 1.96 mm die dimensions, and compatible metallization. Verify compatibility with existing wire bonding processes using Al wires ≤500µm and ensure the backside Ni-Ag system matches the substrate's soldering profile.