SIGC07T60NCX1SA1

Description：IGBT NPT 600V 6A DIE
Series：-

SKU:d1bd8539bfc2 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 6A DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：6:00 AM
Current - Collector Pulsed (Icm)：18 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 6A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：21ns/110ns
Test Condition：300V, 6A, 54Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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SIGC07T60NCX1SA1

Overview

The SIGC07T60NC is a standalone IGBT chip manufactured by Infineon Technologies using Non-Punch-Through (NPT) technology. Designed for integration into power modules, this component features a 100µm die size and supports a collector-emitter voltage of 600V with a DC collector current rating of 6A. It exhibits a positive temperature coefficient to facilitate easy paralleling in high-current applications. The device operates within a junction temperature range of -55°C to +150°C and includes specific metallization layers suitable for epoxy and soft solder die bonding.

Feature Summary

Utilizes NPT technology for robust performance
Positive temperature coefficient enables safe parallel operation
Optimized metallization for flexible die bonding methods

Applications

Industrial motor drives
Power module assembly
High-voltage switching circuits

Procurement Notes

Verify the exact ordering code Q67050-A4134-A001 against procurement requirements. Confirm that the component is handled as an electrostatic sensitive device per MIL-STD 883. Ensure storage conditions adhere to the recommendation of dry nitrogen at 23°C for less than six months to maintain quality standards before assembly.

Selection Notes

Select this chip when designing modules requiring 600V isolation and 6A continuous current handling. The NPT architecture provides reliable switching characteristics for industrial environments. Consider the 100µm thickness and sawn-on-foil format for compatibility with existing wire bonding and die attachment processes in module manufacturing lines.

Part Context

This component belongs to Infineon's discrete IGBT chip portfolio intended for internal use in module fabrication rather than direct end-user installation. It serves as a fundamental building block for constructing larger power electronics assemblies where multiple chips are integrated to achieve higher aggregate power ratings and thermal management capabilities.