SIGC07T60SNCX1SA2

SIGC07T60SNCX1SA2

  • Description:IGBT NPT 600V 6A DIE
  • Series:-

SKU:035dc9240d82 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT NPT 600V 6A DIE
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Bulk
  • IGBT Type:NPT
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):6:00 AM
  • Current - Collector Pulsed (Icm):18 A
  • Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 6A
  • Power - Max:-
  • Switching Energy:-
  • Input Type:Standard
  • Gate Charge:-
  • Td (on/off) @ 25°C:24ns/248ns
  • Test Condition:400V, 6A, 50Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:Die
  • Supplier Device Package:Die
  • Grade:-
  • Qualification:-

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SIGC07T60SNCX1SA2

Overview

The SIGC07T60SNC is a standalone IGBT chip manufactured by Infineon Technologies using NPT (Non-Punch-Through) technology. It features a 100µm die size with dimensions of 2.6 x 2.6 mm² and a collector-emitter voltage rating of 600V. The device supports a DC collector current of 6A and a pulsed current of 18A, operating within a junction temperature range of -55°C to +150°C. Key electrical parameters include a saturation voltage of 1.6V at 6A and a threshold voltage between 3V and 5V.

Feature Summary

  • Utilizes NPT technology for positive temperature coefficient characteristics
  • Designed for easy paralleling in high-power applications
  • Short-circuit proof capability ensures robust operation under fault conditions

Applications

  • Motor drives
  • DuoPack SKP06N60 assembly

Procurement Notes

Verify the specific ordering suffix when sourcing this component. The datasheet lists Q67041-A4672-A003 for sawn-on-foil variants and Q67041-A4672-A002 for unsawn versions. Confirm that the received material matches the required mechanical state for your assembly process before integration.

Selection Notes

Select this chip for designs requiring 600V isolation with a 6A continuous current capacity. Its NPT architecture provides inherent thermal stability, simplifying parallel configurations. Ensure the application environment accommodates the specified 150°C maximum junction temperature limit during peak load operations.

Part Context

This component serves as a bare semiconductor die intended for integration into larger power modules rather than direct PCB mounting. It is specifically engineered for use within the DuoPack SKP06N60 module structure, providing the core switching element for industrial power conversion systems.

Replacement Considerations

Direct replacements require matching the 600V rating, 6A current capacity, and NPT technology. Verify compatibility with existing module footprints and wire bonding specifications if substituting in established DuoPack assemblies.

FAQ

What is the maximum short-circuit withstand time?

The datasheet confirms the chip is short-circuit proof but does not specify the exact duration in microseconds.

How does the NPT technology benefit circuit design?

It provides a positive temperature coefficient, which facilitates safe and easy paralleling of multiple chips without complex current balancing circuits.

What are the recommended storage conditions?

Store in the original container within dry nitrogen at an ambient temperature of 23°C for less than six months.

SIGC07T60SNCX1SA2SIGC07T60SNCX1SA2

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