SIGC07T60SNCX1SA4

SIGC07T60SNCX1SA4

  • Description:IGBT NPT 600V 6A DIE
  • Series:-

SKU:d3ffdce22ed7 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT NPT 600V 6A DIE
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Bulk
  • IGBT Type:NPT
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):6:00 AM
  • Current - Collector Pulsed (Icm):18 A
  • Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 6A
  • Power - Max:-
  • Switching Energy:-
  • Input Type:Standard
  • Gate Charge:-
  • Td (on/off) @ 25°C:24ns/248ns
  • Test Condition:400V, 6A, 50Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:Die
  • Supplier Device Package:Die
  • Grade:-
  • Qualification:-

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SIGC07T60SNCX1SA4

Overview

The SIGC07T60SNC is a standalone IGBT chip manufactured by Infineon Technologies using Non-Punch-Through (NPT) technology. It features a collector-emitter voltage rating of 600V and a DC collector current capacity of 6A at 25°C. The die size measures 2.6 x 2.6 mm with a thickness of 100 µm. Operating junction temperature ranges from -55°C to +150°C. Key electrical parameters include a saturation voltage of 1.6V typical at 6A, and switching times of 24ns turn-on delay and 70ns fall time under specified inductive load conditions.

Feature Summary

  • Utilizes NPT technology for positive temperature coefficient characteristics
  • Engineered for easy paralleling and short circuit proof capability
  • Features high ruggedness suitable for demanding power applications

Applications

  • Motor drives
  • DuoPack SKP06N60 integration

Procurement Notes

Verify the specific ordering code suffix when sourcing. The datasheet lists Q67041-A4672-A003 for sawn on foil and Q67041-A4672-A002 for unsawn variants. Confirm the physical state matches your assembly requirements before procurement. Ensure storage conditions adhere to the recommended dry nitrogen environment to maintain component integrity.

Selection Notes

Select this component for designs requiring a 600V rated IGBT die with a 6A continuous current capability. The NPT technology ensures stable thermal performance across operating temperatures. Consider the 100µm thickness and 2.6mm square footprint for compatibility with existing DuoPack SKP06N60 modules or custom power assemblies requiring bare die integration.

Part Context

This part is an internal semiconductor component designed primarily for module manufacturers rather than end-users. It serves as the core switching element within packaged power modules like the DuoPack SKP06N60. The datasheet provides detailed mechanical and electrical specifications necessary for integrating the bare die into larger power electronic systems.

Replacement Considerations

Direct replacement requires matching the 600V rating, 6A current capacity, and 2.6x2.6mm die dimensions. Verify that the alternative chip supports NPT technology and compatible metallization for epoxy or soft solder die bonding to ensure reliable integration into existing module architectures.

FAQ

What is the maximum pulsed collector current?

The maximum pulsed collector current is 18A, limited by the maximum junction temperature.

Is this chip suitable for parallel operation?

Yes, the datasheet explicitly states it is designed for easy paralleling due to its positive temperature coefficient.

What are the recommended wire bonding materials?

Aluminum wires with a diameter of 500µm or less are recommended for wire bonding.

SIGC07T60SNCX1SA4SIGC07T60SNCX1SA4

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