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Product Detailed Parameters
- Description：IGBT NPT 600V 6A DIE
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：6:00 AM
- Current - Collector Pulsed (Icm)：18 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 6A
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：24ns/248ns
- Test Condition：400V, 6A, 50Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Die
- Grade：-
- Qualification：-
Download product information
Overview
The Infineon SIGC07T60SNCX7SA1 is a Silicon Carbide Junction Field Effect Transistor (JFET) belonging to the CoolSiC™ TSC series. It features a 750 V drain-source voltage rating and utilizes QDPAK packaging for surface-mount installation. The device is engineered with ultra-low on-resistance characteristics, specifically ranging from 1.6 mOhm to 4.1 mOhm, designed to facilitate efficient current protection mechanisms while minimizing power losses and enhancing overall system efficiency in high-power applications.
Feature Summary
- Ultra-low on-resistance for efficient current protection
- Silicon Carbide technology for enhanced thermal performance
- QDPAK surface-mount package design
Applications
- Current protection circuits
- High-efficiency power conversion systems
- Industrial motor drives
Procurement Notes
Verify the specific suffix configuration against official Infineon documentation to ensure compatibility with required thermal and electrical specifications. Confirm that the QDPAK footprint matches the target PCB layout constraints. Cross-reference the lot date codes and RoHS compliance status with the manufacturer's latest release notes prior to procurement integration.
Selection Notes
Select this component when designing systems requiring robust current limiting capabilities with minimal conduction losses. The low RDS(on) range supports high-current applications where thermal management is critical. Ensure the driving circuitry accounts for the JFET's normally-on nature and gate voltage requirements for proper switching control within the intended operational temperature range.
Part Context
This part belongs to Infineon's CoolSiC™ TSC portfolio, which focuses on silicon carbide semiconductors for high-voltage power applications. The TSC series integrates advanced trench Schottky technology to deliver superior performance compared to traditional silicon devices, particularly in terms of switching speed and thermal stability under high-stress conditions.
Replacement Considerations
Consult official Infineon substitution guides for compatible alternatives. Verify pinout compatibility and thermal resistance values before replacing with other JFET models. No direct public substitute part numbers are confirmed in the provided reference data.
