SIGC08T60EX1SA1

Description：IGBT TRENCH FS 600V 15A DIE
Series：TrenchStop™

SKU:7b00e58afcb1 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 600V 15A DIE
Series：TrenchStop™
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：15 A
Current - Collector Pulsed (Icm)：45 A
Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 15A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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SIGC08T60EX1SA1

Overview

The SIGC08T60E is a bare die IGBT chip from Infineon Technologies, utilizing TRENCHSTOP™ IGBT3 technology. It features a 600V collector-emitter voltage and a typical saturation voltage of 1.5V at 15A. The device has a die size of 2.86mm x 2.82mm with a silicon thickness of 70µm. Maximum ratings include a virtual junction temperature range of -40°C to +175°C and a short circuit time of 6µs. Electrical characteristics specify an input capacitance of 800pF and a gate-emitter threshold voltage of 5.8V typ.

Feature Summary

Utilizes 600V trench and field stop technology for low conduction losses.
Features low turn-off losses and a short tail current for efficient switching.
Positive temperature coefficient facilitates easy paralleling in power modules.

Applications

Industrial drives
White goods inverters
Resonant applications

Procurement Notes

This component is a bare semiconductor die intended for integration into power modules or discrete components by system manufacturers. Verification should focus on wafer specifications, die dimensions, and metallization details rather than standard package parameters. Ensure compliance with handling requirements for electrostatic sensitive devices as defined in MIL-STD 883.

Selection Notes

Select this chip for designs requiring 600V blocking capability with optimized switching performance. The positive temperature coefficient supports parallel operation for higher current applications. Verify that the assembly process accommodates the specific die bond and wire bond requirements, such as Al wires ≤500µm, and respects the recommended soldering constraints for the Ni-Ag backside metal layer.

Part Context

The SIGC08T60E belongs to the TRENCHSTOP™ IGBT3 family, representing a generation of silicon chips designed for improved efficiency over previous technologies. As a bare die product, it serves as the core switching element within larger power electronic assemblies, allowing manufacturers to customize packaging and thermal management solutions tailored to specific industrial and consumer appliance needs.

Replacement Considerations

Direct replacement requires matching the 600V rating, die dimensions (2.86mm x 2.82mm), and electrical characteristics. Since this is a bare die, substitute parts must be sourced from compatible foundries or Infineon equivalents with identical footprint and metallization to ensure compatibility with existing module assembly lines.