SIGC11T60SNCX1SA1

Description：IGBT NPT 600V 10A DIE
Series：-

SKU:fcb6b1003a2f Category: Single IGBTs Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 10A DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：10:00 AM
Current - Collector Pulsed (Icm)：30 A
Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 10A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：28ns/198ns
Test Condition：400V, 10A, 25Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

Download product information

SIGC11T60SNCX1SA1

Overview

The SIGC11T60SNC is a 600 V NPT technology IGBT chip designed for integration into modules. It features a 100 µm thickness and a die size of 3.25 x 3.25 mm². The device supports a DC collector current of 10 A and a pulsed collector current of 30 A. Key electrical parameters include a saturation voltage of 1.7 V to 2.4 V at 10 A, an input capacitance of 550 pF, and a turn-off delay time of 198 ns. Operating junction temperature ranges from -55 °C to +150 °C.

Feature Summary

Utilizes Non-Punch-Through (NPT) technology for robust performance
Features a positive temperature coefficient for easy paralleling
Optimized for high-speed switching applications

Applications

Industrial motor drives
Power conversion systems
Inverter modules

Procurement Notes

Verify the specific ordering code Q67050-A4155-A001 against procurement requirements. Confirm that the component is handled as an Electrostatic Discharge Sensitive Device per MIL-STD 883. Ensure storage conditions adhere to the recommendation of dry nitrogen below 23°C for less than six months to maintain integrity.

Selection Notes

Select this chip when designing modules requiring 600 V blocking capability with a 10 A continuous current rating. The NPT architecture provides a positive temperature coefficient, facilitating parallel operation without complex current balancing circuits. Verify thermal management capabilities to support the specified operating junction temperature range up to 150 °C.

Part Context

This component is a bare IGBT chip intended for assembly within larger power electronic modules rather than standalone discrete use. It belongs to Infineon's portfolio of chips utilizing NPT technology, which is engineered for improved ruggedness and switching characteristics compared to older punch-through designs.