SIGC121T60NR2CX1SA3

Description：IGBT NPT 600V 150A DIE
Series：-

SKU:0ccec6f19fec Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 150A DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：150 A
Current - Collector Pulsed (Icm)：450 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 150A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：125ns/225ns
Test Condition：300V, 150A, 1.5Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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SIGC121T60NR2CX1SA3

Overview

The SIGC121T60NR2C is a 600V NPT technology IGBT chip designed for module integration. It features a 150A DC collector current and a 450A pulsed collector current capability. The device operates within a junction temperature range of -55°C to +150°C. Key electrical parameters include a saturation voltage of 1.7V to 2.5V at 150A, an integrated gate resistor of 5Ω to 7Ω, and a turn-off delay time of 225ns. The die size measures 11 x 11 mm² with a thickness of 100µm.

Feature Summary

Positive temperature coefficient facilitates easy paralleling in high-power applications.
Integrated gate resistor simplifies driver circuit design and improves switching stability.
NPT (Non-Punch-Through) technology ensures robust performance and reliable operation.

Applications

Industrial motor drives
High-power inverter modules
Switching power supplies

Procurement Notes

Verify the specific ordering code Q67041-A4684-A001 against your requirements. Confirm that the component is handled as an electrostatic discharge sensitive device per MIL-STD 883. Ensure storage conditions adhere to the recommendation of dry nitrogen at 23°C for less than six months to maintain integrity.

Selection Notes

Select this chip when integrating discrete IGBTs into custom or standard modules requiring 600V blocking capability. Consider the 100µm thickness and 11x11mm dimensions for thermal management and die bonding compatibility. Evaluate the integrated gate resistance value against your specific switching speed and driver output impedance requirements.

Part Context

This component is a bare silicon die intended for assembly into larger semiconductor packages. It serves as the core switching element within Infineon's IGBT module portfolio. The datasheet references the BSM 150 GD 60 DLC module data sheet for system-level context.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

FAQ

What is the function of the integrated gate resistor?

The integrated gate resistor, ranging from 5Ω to 7Ω, is built into the chip to simplify external driver circuitry and assist in controlling switching transients.