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Product Detailed Parameters
- Description：IGBT NPT 600V 10A DIE
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：10:00 AM
- Current - Collector Pulsed (Icm)：30 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 10A
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：21ns/110ns
- Test Condition：300V, 10A, 27Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Die
- Grade：-
- Qualification：-
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Overview
The SIGC12T60NCX7SA1 is a single IGBT manufactured by Infineon Technologies, designed for high-power switching applications. It features a 600V collector-emitter voltage rating and operates within a junction temperature range of -55°C to 150°C. The component utilizes surface mount technology in a die package configuration. As an obsolete product, it represents legacy silicon-based power semiconductor solutions previously utilized in industrial and automotive contexts requiring robust voltage handling capabilities.
Feature Summary
- Single IGBT structure optimized for high-voltage switching
- Surface mount die package for compact integration
- Wide operating temperature range for harsh environments
Applications
- Industrial motor drives
- Power supply units
- Automotive electronics
Procurement Notes
This component is officially listed as obsolete by the manufacturer. Procurement requires verification of availability through authorized distributors or secondary markets. Buyers must confirm authenticity and storage conditions due to the end-of-life status. Cross-referencing with current replacement series is recommended to ensure long-term supply chain stability and compatibility with modern design requirements.
Selection Notes
Engineers should evaluate this part only for maintenance or legacy system repairs. For new designs, select current Infineon CoolMOS or OptiMOS families offering improved efficiency and thermal performance. Verify that the die package form factor matches existing PCB footprints if retrofitting. Consider voltage derating and thermal management constraints inherent to older silicon technologies compared to modern wide-bandgap alternatives.
Part Context
Infineon Technologies is a global leader in power systems and IoT semiconductors. This IGBT belongs to their historical portfolio of discrete power devices. The company continues to innovate with SiC and GaN technologies, while maintaining support for established silicon products used in critical infrastructure. The SIGC series reflects past engineering standards for cost-effective, reliable power switching solutions.
Replacement Considerations
No direct public substitute part numbers are confirmed for this specific obsolete die variant. Engineers should consult Infineon's official obsolescence notices for recommended functional equivalents within the current CoolMOS or standard IGBT portfolios.
