SIGC14T60NCX1SA1

SIGC14T60NCX1SA1

  • Description:IGBT NPT 600V 15A DIE
  • Series:-

SKU:1861857b6909 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:IGBT NPT 600V 15A DIE
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Bulk
  • IGBT Type:NPT
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):15 A
  • Current - Collector Pulsed (Icm):45 A
  • Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 15A
  • Power - Max:-
  • Switching Energy:-
  • Input Type:Standard
  • Gate Charge:-
  • Td (on/off) @ 25°C:21ns/110ns
  • Test Condition:300V, 15A, 18Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:Die
  • Supplier Device Package:Die
  • Grade:-
  • Qualification:-

Download product information

SIGC14T60NCX1SA1

Overview

The SIGC14T60NCX1SA1 is a bare IGBT chip utilizing NPT technology with a 600V collector-emitter voltage rating. It features a 15A DC collector current and a 100µm die thickness. The component operates within a junction temperature range of -55°C to +150°C. Key electrical parameters include a maximum VCE(sat) of 2.5V at 15A, a VGE(th) range of 4.5V to 6.5V, and a zero gate voltage collector current of 1.1µA. Dynamic characteristics specify a turn-off fall time of 25ns under inductive load conditions.

Feature Summary

  • Utilizes Non-Punch-Through (NPT) technology for robust performance
  • Features a positive temperature coefficient for safe parallel operation
  • Designed as a bare die for integration into custom power modules

Applications

  • Industrial motor drives
  • Power module assembly
  • Discrete component manufacturing

Procurement Notes

Verify the specific ordering code Q67050-A4135-A001 against the datasheet to ensure correct revision matching. Confirm that the X1SA1 suffix aligns with your required packaging or tape-and-reel specifications. Ensure storage conditions remain within dry nitrogen and below 23°C to maintain component integrity prior to use.

Selection Notes

Select this component when designing high-voltage IGBT modules requiring 600V blocking capability. The NPT technology provides reliable switching characteristics suitable for industrial drive applications. Consider the 100µm thickness and die size for thermal management and bonding compatibility within your specific module architecture.

Part Context

This part belongs to Infineon's discrete IGBT chip portfolio, specifically engineered for internal use in power modules rather than direct circuit mounting. It serves as a fundamental building block for manufacturers assembling multi-chip power electronics solutions.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Direct replacement requires identical NPT technology specifications and compatible mechanical dimensions.

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is +150°C.

Is this component suitable for life-support systems?

No, it may only be used in life-support devices with express written approval from Infineon Technologies.

What is the recommended wire bond material?

Aluminum wire with a diameter of 500µm or less is recommended.

SIGC14T60NCX1SA1SIGC14T60NCX1SA1

Click on the inquiry