SIGC14T60SNCX1SA4

Description：IGBT NPT 600V 15A DIE
Series：-

SKU:cb5b5b0a52cf Category: Single IGBTs Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 15A DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：15 A
Current - Collector Pulsed (Icm)：45 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 15A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：31ns/261ns
Test Condition：400V, 15A, 21Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

Download product information

SIGC14T60SNCX1SA4

Overview

The SIGC14T60SNC is a 600V NPT technology IGBT chip designed for integration into power modules. It features a 100µm die size with dimensions of 3.8 x 3.8 mm² and supports a DC collector current of 15A at Tj=25°C, with a pulsed current capability of 45A. The device exhibits a positive temperature coefficient and short-circuit proof characteristics. Operating junction temperatures range from -55°C to +150°C, with a maximum gate-emitter voltage of ±20V.

Feature Summary

NPT technology providing short-circuit proof operation
Positive temperature coefficient facilitating easy paralleling
Compatible with epoxy and soft solder die bonding

Applications

Power module assembly for motor drives

Procurement Notes

Verify the specific ordering suffix (e.g., A001 for sawn on foil or A002 for unsawn) against the application requirements. Confirm that the component meets the required visual inspection standards (AQL 0.65) and electrostatic discharge sensitivity classifications. Ensure storage conditions adhere to the recommended environment specifications.

Selection Notes

Select this chip based on the requirement for a 600V breakdown voltage and a 15A continuous collector current rating. Consider the thermal management capabilities provided by the 100µm thickness and the metallization systems suitable for standard die bonding processes. Evaluate the switching speed characteristics relative to the target inductive load conditions.

Part Context

This component serves as the core semiconductor die for Infineon's SGP15N60 discrete package. It represents an evolution in IGBT technology utilizing Non-Punch-Through (NPT) design principles. The chip is manufactured using a 150mm wafer process and is intended for high-reliability industrial applications requiring robust switching performance.