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The SIGC14T60SNC is a bare IGBT chip manufactured by Infineon Technologies using Non-Punch-Through (NPT) technology. It features a collector-emitter voltage rating of 600 V and a DC collector current capability of 15 A at 25°C. The die size measures 3.8 x 3.8 mm² with a thickness of 100 µm. Key electrical parameters include a saturation voltage of 1.6 V to 2.5 V, a threshold voltage of 3 V to 5 V, and an input capacitance of up to 960 pF. The device supports a maximum operating junction temperature of +150 °C.
Verify the specific ordering suffix against official documentation to confirm physical state. The datasheet distinguishes between sawn-on-foil and unsawn variants. Ensure compatibility with assembly processes such as epoxy or soft solder die bonding. Confirm storage requirements including dry nitrogen environments if applicable.
Select this component when integrating discrete IGBTs into custom power modules or assemblies. Consider thermal management capabilities as the DC current rating depends on assembly thermal properties. Evaluate switching speed requirements against the specified dynamic characteristics under inductive load conditions.
This bare chip serves as the core semiconductor element for the SGP15N60 module. It represents Infineon's implementation of 600V NPT technology optimized for industrial drive applications. The component allows manufacturers to design custom power electronics solutions with tailored packaging and thermal interfaces.
Public confirmed substitute part numbers are not available in the provided documentation.