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Product Detailed Parameters
- Description：IGBT NPT 600V 20A DIE
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：20 A
- Current - Collector Pulsed (Icm)：60 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 20A
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：21ns/110ns
- Test Condition：300V, 20A, 13Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Die
- Grade：-
- Qualification：-
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Overview
The SIGC18T60NCX1SA3 is a silicon IGBT chip manufactured by Infineon Technologies using Non-Punch-Through (NPT) technology. It features a 600V collector-emitter voltage rating and a 20A DC collector current capability at 25°C. The die size measures 4.3 x 4.3 mm² with a thickness of 100µm. Key electrical parameters include a saturation voltage of 1.7V to 2.5V at 20A, a threshold voltage of 4.5V to 6.5V, and switching times of 8ns rise and 25ns fall time under specified inductive load conditions.
Feature Summary
- Utilizes NPT technology for positive temperature coefficient characteristics
- Designed for easy paralleling in high-power applications
- Features metallization suitable for epoxy and soft solder die bonding
Applications
- Industrial motor drives
- High-power inverter modules
- Variable speed drive systems
Procurement Notes
Verify the component status as this specific part number may be subject to lifecycle changes or obsolescence notices. Confirm that the ordering suffix X1SA3 aligns with current packaging and traceability requirements. Ensure compatibility with existing assembly processes regarding wire bond materials and recommended storage environments to maintain device integrity prior to installation.
Selection Notes
Select this chip for designs requiring robust short-circuit ruggedness and low on-state voltage. Consider the thermal properties of the final assembly, as the DC collector current rating depends heavily on the heat dissipation capabilities of the module housing. Evaluate the gate drive requirements against the specified threshold and leakage currents to ensure reliable switching performance across the operating temperature range.
Part Context
This component belongs to the family of discrete IGBT chips intended for integration into power modules rather than standalone circuit boards. It serves as the core switching element within larger assemblies, providing the necessary voltage and current handling capabilities for industrial power electronics applications.
Replacement Considerations
Consult official Infineon documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' chips without rigorous electrical and mechanical validation.
