SIGC19T60SEX1SA1

Description：IGBT TRENCH FS 600V 40A DIE
Series：TrenchStop™

SKU:889ceba58856 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 600V 40A DIE
Series：TrenchStop™
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：40 A
Current - Collector Pulsed (Icm)：120 A
Vce(on) (Max) @ Vge, Ic：1.97V @ 15V, 40A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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SIGC19T60SEX1SA1

Overview

The SIGC19T60SE is a bare die IGBT utilizing TRENCHSTOPTM IGBT3 Chip technology. It features a 600V collector-emitter voltage and a maximum DC collector current of 40A at a junction temperature of 25°C. The device has a die size of 4.84mm x 3.98mm with a silicon thickness of 70µm. Key electrical characteristics include a typical VCEsat of 1.13V at VGE=15V and IC=40A, and a threshold voltage range of 4.2V to 5.6V. It supports a virtual junction temperature range from -40°C to +175°C and offers a short circuit time of 5µs.

Feature Summary

Utilizes 600V trench and field stop technology for optimized performance.
Designed for low saturation voltage (VCEsat) and reduced turn-off losses.
Features a positive temperature coefficient to facilitate easy paralleling.
Includes a short tail current characteristic for improved switching behavior.

Applications

Industrial power modules
Discrete component integration
Motor drives
White goods inverters
Resonant applications

Procurement Notes

Verify the specific revision level against the datasheet Rev. 2.1 dated 20.07.2017 before procurement. Confirm that the application environment meets the storage requirements for MBB bags if applicable. Ensure assembly processes respect the recommended soldering guidelines for the Ni-Ag backside metal system to maintain reliability.

Selection Notes

Select this bare die for custom module designs requiring high current density in a compact footprint. Consider the 70µm silicon thickness and 4.84mm x 3.98mm dimensions for thermal management calculations. Verify compatibility with Al wire bonding standards and ensure the gate drive circuit accommodates the specified VGE limits.

Part Context

This component belongs to Infineon's TRENCHSTOPTM IGBT3 family, representing advanced trench gate technology. It serves as a fundamental building block for power electronics, specifically designed for integration into larger assemblies rather than standalone discrete use. The product focuses on efficiency and robustness for industrial environments.

Replacement Considerations

No direct public substitute part numbers are documented for this specific bare die configuration. Replacement requires evaluating alternative IGBT chips with matching voltage ratings, current capabilities, and physical dimensions within the target module design constraints.