SIGC25T60NCX1SA2

Description：IGBT NPT 600V 30A DIE
Series：-

SKU:cb2888324ccd Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 30A DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：30 A
Current - Collector Pulsed (Icm)：90 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 30A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：21ns/110ns
Test Condition：300V, 30A, 8.2Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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SIGC25T60NCX1SA2

Overview

The SIGC25T60NC is a 600 V NPT-technology IGBT chip designed for integration into power modules. It features a 100 µm die size with dimensions of 4.5 x 5.71 mm² and an active area of 21.4 mm². The device supports a DC collector current of 30 A and a pulsed current of 90 A, operating within a junction temperature range of -55 °C to +150 °C. Key electrical parameters include a saturation voltage of 1.7 V to 2.5 V at 30 A, a threshold voltage of 4.5 V to 6.5 V, and switching times of 8 ns rise and 25 ns fall time under specified inductive load conditions.

Feature Summary

Utilizes Non-Punch Through (NPT) technology for robust performance
Features a positive temperature coefficient for stable operation
Facilitates easy paralleling of multiple chips in module designs

Applications

IGBT Module Integration
Industrial Drives

Procurement Notes

Verify the specific ordering code Q67050-A4143-A001 against procurement requirements. Confirm that the component is handled as an Electrostatic Discharge Sensitive Device per MIL-STD 883. Ensure storage conditions adhere to the recommendation of dry nitrogen below 23°C for periods not exceeding six months to maintain reliability.

Selection Notes

Select this chip for applications requiring 600 V blocking capability and high thermal stability. The NPT architecture provides reliable operation across the specified temperature range. Consider the 100 µm thickness and metallization systems when designing die bonding processes compatible with epoxy or soft solder techniques.

Part Context

This component is a discrete semiconductor chip intended for internal use within Infineon's IGBT modules rather than a standalone through-hole or surface-mount package. It serves as the core switching element in power electronics assemblies, specifically leveraging NPT technology to manage high voltages and currents efficiently.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. As this is a raw chip component, direct replacements depend on specific module-level compatibility and manufacturing specifications.