SIGC25T60NCX1SA7

Description：IGBT NPT 600V 30A DIE
Series：-

SKU:60c964a1534b Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 30A DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：30 A
Current - Collector Pulsed (Icm)：90 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 30A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：21ns/110ns
Test Condition：300V, 30A, 8.2Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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SIGC25T60NCX1SA7

Overview

The SIGC25T60NC is a 600 V NPT-technology IGBT chip designed for integration into power modules. It features a 100 µm die size with dimensions of 4.5 x 5.71 mm² and an active area of 21.4 mm². The device supports a DC collector current of 30 A and a pulsed current of 90 A, operating within a junction temperature range of -55 °C to +150 °C. Key electrical parameters include a saturation voltage (VCE(sat)) of 1.7 V to 2.5 V at 30 A, a threshold voltage (VGE(th)) of 4.5 V to 6.5 V, and switching times of 8 ns rise and 25 ns fall time under specified inductive load conditions.

Feature Summary

Utilizes Non-Punch-Through (NPT) technology for robust performance
Positive temperature coefficient facilitates easy paralleling
Compatible with epoxy and soft solder die bonding processes

Applications

IGBT module construction
Industrial motor drives
Power conversion systems

Procurement Notes

Verify the specific ordering code Q67050-A4143-A001 against procurement requirements. Confirm that the component meets Electrostatic Discharge Sensitive Device standards per MIL-STD 883. Ensure storage conditions adhere to the recommendation of dry nitrogen below 23°C for periods under six months to maintain integrity.

Selection Notes

Select this chip for applications requiring 600 V blocking capability and high thermal stability. The NPT structure provides reliable operation across the specified temperature range. Consider the 100 µm thickness and metallization system when designing the die attachment and wire bonding interfaces for optimal thermal and electrical performance.

Part Context

This component is a discrete IGBT chip intended for internal use within Infineon's module manufacturing lines. It serves as the core semiconductor element for higher-level assemblies like the FS 30 R06 XL4 module. The part represents a standard building block for medium-power industrial electronics rather than a standalone through-hole or surface-mount component.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. As this is a raw chip for module assembly, direct replacements require matching NPT technology, voltage ratings, and physical dimensions.